LPE growth of GaAs: Formation of nuclei and surface terraces

Mattes, Brenton L.; Route, R.

doi:10.1016/s0022-0248(74)80057-6

Cited by 29 publications

(7 citation statements)

References 26 publications

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“…The disappearance of irregularities at high growth temperatures is attributed to the increase in thermal gradient across the melt-solid interface. This reduces the terrace width by reducing the diffuse interface region, and thereby increasing the nucleation density (Mattes and Route 1974). At the same time, there is also a possibility of terrace formation due to submicroscopic terrace structure left after the usual polishing and etching at the surface of a mislocated substrate as suggested by Bauser et al (1974).…”

Section: Ramp Coolingmentioning

confidence: 97%

“…The surface morphology of LPE grown layers are affected by several factors like substrate preparation, extent of thermal degradation of the substrate prior to growth, inadequate wetting and non-uniform melt back, phase changes due to high impurity levels, degree of melt supersaturation, growth temperature, constitutional supercooling, etc (Mattes and Route 1974;Holmes and Kamath 1980). The selection of proper growth temperature is quite important as the high growth temperature enhances the antimony volatilization from the solution whereas at low temperatures, closer to indium melting point the solution viscosity is high, which influences the melt contact angle with the substrate and affects wetting of the substrate.…”

Section: Ramp Coolingmentioning

confidence: 99%

“…For example, chemical contamination from pre-growth etching or from inside the LPE unit (O 2 , H 2 O) can lead to patchy or insufficient nucleation. This is particularly a problem in lowtemperature LPE growth of InSb (Mattes and Route 1974), GaSb (Woelk and Benz 1974) and InP (Wrick et al 1976), where native oxides may not be reduced by the ambient hydrogen. Holmes and Kamath (1980) found that for low-temperature LPE growth of InSb and GaInSb on InSb substrates, the proper chemical etching of the substrate was crucial in obtaining uniform nucleation.…”

Section: Step Coolingmentioning

confidence: 99%

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Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy

Udayashankar

Bhat

2003

Bull Mater Sci

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Unintentionally doped homoepitaxial InSb films have been grown by liquid phase epitaxy employing ramp cooling and step cooling growth modes. The effect of growth temperature, degree of supercooling and growth duration on the surface morphology and crystallinity were investigated. The major surface features of the grown film like terracing, inclusions, meniscus lines, etc are presented step-by-step and a variety of methods devised to overcome such undesirable features are described in sufficient detail. The optimization of growth parameters have led to the growth of smooth and continuous films. From the detailed morphological, X-ray diffraction, scanning electron microscopic and Raman studies, a correlation between the surface morphology and crystallinity has been established.

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Section: Ramp Coolingmentioning

confidence: 97%

Section: Ramp Coolingmentioning

confidence: 99%

Section: Step Coolingmentioning

confidence: 99%

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Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy

Udayashankar

Bhat

2003

Bull Mater Sci

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“…The surface morphology of LPE grown layers depends on several factors like substrate preparation and orientation, extent of thermal decomposition of the substrate prior to growth, inadequate wetting and non-uniform meltback, phase changes due to high impurity levels, degree of melt supersaturation, constitutional supercooling, etc (Mattes and Route 1974;Mottram and Peaker 1974). However, in any particular growth system, simple working tolerances can be established to ensure reproducible growth of high quality layers.…”

Section: Nucleation Morphologymentioning

confidence: 99%

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

1995

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Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrale orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from the C-V characteristics. Layers grown from antimony rich melts always exhibit p-type conductivity. In contrast, a type conversion from p-to n~ was observed in layers grown from gallium rich melts below 400 C. The electron mobility of undoped n-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb-and Ga-rich solutions has been evaluated.

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“…However, the surface morphology of the GaAs layer grown on the Ge film was much smoother and exhibited features resembling surface terraces usually observed in GaAs grown on rough misoriented surfaces by LPE. 23 EBSD patterns with high indexing reliability factor and pattern quality were obtained and the corresponding inverse polefigure grain orientation maps along the out-of-plane direction are shown in Figs. 4(c) and 4(d), respectively.…”

mentioning

confidence: 99%

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

Dutta

Rathi

Zheng

et al. 2014

Applied Physics Letters

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Articles you may be interested inEffect of the Al0.3Ga0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metalorganic chemical vapor deposition Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor Effectiveness of multiple-pair buffer layer to improve the GaN layers grown by metalorganic chemical vapor depositionWe demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of $10 7 cm À2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market. V C 2014 AIP Publishing LLC. [http://dx.

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LPE growth of GaAs: Formation of nuclei and surface terraces

Cited by 29 publications

References 26 publications

Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy

Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

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