LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors

High current gain stability of carbon-doped p-GaAs in InGaP/GaAs heterojunction bipolar transistors

“…Trimethylgallium (TMG) and trimethylindium (TMI) were used as group III precursors. Arsine (AsH 3 ) and phosphine (PH 3 n-type and p-type, respectively. Palladium purified H 2 was used as a carrier gas.…”

“…Metal-organic chemical vapor deposition (MOCVD) is beneficial method to grow carbon-doped p-GaAs material. However, many studies of carbon-doped p-GaAs layers grown by MOCVD have been carried out [3][4][5][6][7][8][9][10][11][12], most were grown at V/III ratios below 1.0.…”

Hydrogen Passivation in Semiconductors

“…During epitaxial growth of III-V materials by gas phase techniques like metalorganic chemical vapor deposition (MOCVD) and metalorganic molecular beam epitaxy (MOMBE), hydrogen can be introduced from the source gases [80][81][82][83][84][85][86]. Zn-doped InP grown by MOCVD with an InAsP capping layer is cooled down in an AsH3 ambient; the Zn is passivated by hydrogen which is introduced by the pyrolysis of AsH3 at the surface [80,81].…”

“…Zn-doped InP grown by MOCVD with an InAsP capping layer is cooled down in an AsH3 ambient; the Zn is passivated by hydrogen which is introduced by the pyrolysis of AsH3 at the surface [80,81]. For epitaxial lavers of GaAs:C and related alloys grown from metalorganic sources, an appreciable fraction of the C has been found to be passivated by hydrogen introduced from the source gases [80][81][82][83][84][85][86]. Figure 8 shows infrared absorption spectra of C-H complexes in GaAs:C grown by metalorganic MBE.…”

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

“…The incorporation of C atoms has been obtained in different way. Intrinsic C doping was studied by using arsine or trimethylarsenic and trimethylgallium or triethylgallium [5][6][7]8]. With this method, however, the V/III ratio could not be controlled independently from the dopant source flow.…”