&lt;i&gt;In-Situ&lt;/i&gt; N&lt;sub&gt;2&lt;/sub&gt;-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering

Ohmi, Shun–ichiro; Ishimatsu, Shin; Horiuchi, Yosuke; Kudoh, Sohya

doi:10.1587/transele.2019fup0001

Cited by 2 publications

(1 citation statement)

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“…Generally, the Hf-rich HfNx (x≤1.0) shows metallic properties, while the N-rich HfNx (x>1.0) shows insulating property [24]. We have reported the in situ formation of metalinsulator-Si (MIS) stacked structure utilizing HfNx (x=1.1~1.3) high-k gate insulator with an amorphous phase and HfN0.5 gate electrode deposited by the electron cyclotron resonance (ECR)plasma reactive sputtering [25]- [30]. We have evaluated the interface between the HfN1.3/HfN1.1 bilayer gate insulator and Si(100) substrate.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate

Ohmi

Ohtaguchi

Ihara

et al. 2021

IEEE J. Electron Devices Soc.

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We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the postmetallization annealing (PMA) at 400 o C/5 min for HfN0.5/HfN1.15/Si(100) MFS diode structure which was deposited with in situ process by the electron cyclotron resonance (ECR) plasma reactive sputtering. The remnant polarization (2Pr) of 24.0 C/cm 2 with the coercive field (Ec) of 3.8 MV/cm was obtained from the P-V characteristic under the voltage sweep of ±𝟏𝟎 V. Fatigue characteristics without wake-up were confirmed until 10 9 program/erase (P/E) cycles under the input pulses of ±𝟔 V/5 s although the 2Pr was gradually decreased to 10.7 C/cm 2 . The polarization (Psw) of 13.4 C/cm 2 was clearly observed by the positive-up negative-down (PUND) measurements utilizing the input pulses of ±𝟔 V/5 s. The memory window (MW) of 0.32 V was realized in the C-V characteristics by the program operation at -10 V/1 s.

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Section: Introductionmentioning

confidence: 99%