&lt;title&gt;193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system&lt;/title&gt;

Allen, Robert D.; Wallraff, Gregory M.; Pietro, Richard A. Di; Hofer, Donald C.; Kunz, Roderick R.

doi:10.1117/12.210396

Cited by 30 publications

(9 citation statements)

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“…This also enables the partial coherence () of the illumination to be varied from any value between 0. 3 The shallow depth of focus predicted at 0.i8m to O.l3im feature sizes required that the stepper focus system be stable and linear during the exposure. Input from the IC manufacturers placed a maximum value of O.l.tm total indicated range (TIR) stability ofthe focus system during exposure.…”

Section: Projection Optical Systemmentioning

confidence: 99%

<title>ArF MicroStep for 193-nm process development</title>

1996

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A cost effective wafer stepper system, the ArF MicroStep, has been developed for photoresist and process development at design rules of 0.18im to 0.l3Mm using a 193nm excimer laser illumination source. Development of the ArF MicroStep system was driven by customer requirements for a high numerical aperture exposure tool, with its configuration, specifications and development mutually conducted between IC manufacturers, Integrated Solutions, Inc., (151), and related equipment suppliers. The system was specifically designed for compatibility with imaging below 0.18jim and is configured with a 10 : 1 catadioptic reduction objective, having variable numerical aperture from 0.4 to 0.6. During the manufacturing cycle, the ArF MicroStep and its reduction optics were characterized independently and verified to perform within the requirements of the overall system. Final system integration and test permitted verification of performance through exposures in photoresist. Exposures in a single level resist have demonstrated greater than 0.4im depth of focus for 0. 16tm features over the exposure field ofthe system, with dense structures down to 0.l4im resolved by the ArF MicroStep. Using a top surface imaging process, 0.6tm depth of focus has been demonstrated for 0. l6pm geometries, with dense structures down to 0.15m resolved.

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Section: Projection Optical Systemmentioning

confidence: 99%

<title>ArF MicroStep for 193-nm process development</title>

1996

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“…Etch resistant groups have a high carbon content and make use of saturated carbon cycles because following to the Ohnishi parameter 12 and the ring parameter 13 , this theoretically increases the etch resistance of the resists. One drawback of all grafted function is that they are cleavable, meaning that they might be removed by a chemical reaction similar to the resist deprotection reaction that is used to generate the solubility switch inside the exposed areas of the positive tone CAR's.…”

Section: Introductionmentioning

confidence: 99%

Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations

et al. 2006

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The weaker etch resistance of 193 nm resists 1 is raising questions concerning their usability for the coming nodes as a single layer resist. We have found that 193 nm positive tone resists, that have been designed 2 incorporating etch resistant groups like adamantyl or isobornyl 3-7 , exhibit chemical modifications concerning these grafted functions while undergoing an oxide etch step. Previously performed experiments have pointed out that the photoacid generator (PAG) that is still contained in the unexposed regions of the sacrificial layer might be a reason for the modifications in the chemical buildup of this resists. Therefore, this work has focused on evaluating the impact of reactive ion oxide etching 8-10 on 193nm materials, for positive and negative tone chemically amplified resists. We used Thermo Gravimetric Analysis (TGA), Fourier Transformed Infra Red Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) in order to check model formulations based on PHS, methacrylate or cyclic olefin polymers with various protecting groups having different activation energies and formulated with or without PAG and in order to understand the impact of the photoactive compound in the resist degradation behavior during plasma etch.

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“…Thus, a large amount of research aiming to introduce dry etch resistance into the t -BMA-based polymers is being performed. Much of this research focuses on introducing alicyclic methacrylate monomers into P( t -BMA)-based resists. − The structure of one of these types of copolymers, consisting of both adamantyl and t -BMA, is shown in Figure . Also shown in Figure is the deprotection of the carboxylic acid, catalyzed by photogenerated acid.…”

Section: Introductionmentioning

confidence: 99%

“…The alicyclic copolymers can have resistance to halogen-gas reactive ion etch (RIE) sufficient for modern device manufacturing . While the copolymers have low absorption at 193 nm wavelength, many of the copolymers with adequate halogen-gas RIE resistance are not soluble in aqueous base developers after exposure. , Other possible resist systems capable of being imaged with ArF lasers and still compatible with modern nanofabrication methods include top surface imaging resists and bilevel resists. The bilevel approach has the advantage that the planarizing layer can be chosen to offer superb halogen-gas RIE resistance.…”

Section: Introductionmentioning

confidence: 99%

Lithographic Properties of Poly(tert-butyl methacrylate)-Based Block and Random Copolymer Resists Designed for 193 nm Wavelength Exposure Tools

1996

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Block and random copolymers were prepared using the monomers tert-butyl methacrylate and [3-(methacryloxy)propyl]pentamethyldisiloxane. The polymers have low absorption at 193 nm wavelength, making them attractive candidates for 193 nm wavelength imaging. The resists have a high resistance to oxygen reactive ion etching, making them suitable for the imagable layer of a bilevel resist system. After exposure, the block copolymers have better development behavior in aqueous base than that of the corresponding random copolymers even though they have a long hydrophobic siloxane block.

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<title>193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system</title>

Cited by 30 publications

References 0 publications

<title>ArF MicroStep for 193-nm process development</title>

<title>ArF MicroStep for 193-nm process development</title>

Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations

Lithographic Properties of Poly(tert-butyl methacrylate)-Based Block and Random Copolymer Resists Designed for 193 nm Wavelength Exposure Tools

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