<title>AIN on diamond thin films grown by chemical vapor deposition methods</title>

Abstract

Aluminum nitride (A1N) films were grown by chemical vapor deposition (CVD) on boron doped diamond films deposited by the hot-filament CVD (HFCVD) method. The films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) and Raman spectroscopy. The electrical characterization of the A1N/diamond interface was performed by current-voltage (I-V) and capacitancevoltage (C-V) measurements. The resulting films showed one x-ray diffraction peak of (100) oriented A1N and three diamond diffraction peaks of (1 1 1), (220) and (33 1) orientation. The Raman spectra showed two peaks, one at 660 cm' due to scattering by the A1N lattice and the other at 1335 cm' by the diamond lattice. The I-V measurements on the metal(W)/diamond/Si/Al structure showed ohmic behavior from which the diamond film resistivity of 5 x 1O a-cm was estimated. The I-V measurements on the W/A1N/diamond/Si/Al structure showed rectifying behavior. The capacitance of the film was independent of the applied voltage and was dominated by the diamond bulk capacitance.