2004
DOI: 10.1063/1.1811382
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Structural and interface properties of an AlN diamond ultraviolet light emitting diode

Abstract: Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[101¯0] AlNI‖(100)[011] diamond for the predominant AlN domain (type I) and (0001)[1¯21¯0] AlNII‖(100)[011] diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a n-AlN∕p-diamond diode was determined as 1.15V. By spect… Show more

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Cited by 14 publications
(6 citation statements)
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“…For (100)-orientated diamond, the polar c-axis is perpendicular to the substrate surface whereas two different in-plane orientations have been observed [18]. This has also been reported by Miskys et al for AlN thin films on (100)-orientated diamond [41]. In the case of diamond (110), the growth Top view SEM images of (left) self-assembled and (right) SAG GaN NWs on diamond for different substrate temperatures.…”
Section: Structural Propertiessupporting
confidence: 58%
“…For (100)-orientated diamond, the polar c-axis is perpendicular to the substrate surface whereas two different in-plane orientations have been observed [18]. This has also been reported by Miskys et al for AlN thin films on (100)-orientated diamond [41]. In the case of diamond (110), the growth Top view SEM images of (left) self-assembled and (right) SAG GaN NWs on diamond for different substrate temperatures.…”
Section: Structural Propertiessupporting
confidence: 58%
“…Polycrystalline and/or textured AlN layers were generally grown on (0 0 1) diamond substrates. The predominant orientations were (0 0 0 1)/11 2 0SAlN J (0 0 1)[11 0]diamond, (0 0 0 1)/10 1 0SAlN J (0 0 1)[11 0]diamond, and randomly rotated {1 0 1 1}AlN J (0 0 1) diamond [9,13]. In contrast, an AlN layer with a two-domain structure was grown on a (111) diamond substrate.…”
Section: Introductionmentioning
confidence: 99%
“…4a, respectively). [28][29][30]40,41 Due to the nearly hexagonal shape of the NWs, the statistical distribution of these crystal domains can be estimated. For GaN NWs grown on bare HD (001) (Fig.…”
Section: Epitaxial Relationshipmentioning
confidence: 99%