&lt;title&gt;AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)&lt;/title&gt;

Chakhnakia, Z.; Khvedelidze, Levan; Khuchua, Nina; Melkadze, Revaz; Peradze, G.; Sakharova, Tatiana B.; Hatzopoulos, Z.

doi:10.1117/12.558432

Cited by 12 publications

(2 citation statements)

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“…The δ-doping technique allows one to obtain an extremely sharp doping profile and a high-density-doped layer [26][27][28][29], and it is of great interest [30][31][32].…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

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Abstract-The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze transport in this device. We find the relative mobility as a linear and increasing function in different modes; also, we find transconductance as an almost flat function in all the evaluated interval. Finally, we analyze the differential capacitance and resistivity, and we report regions where this device is operating in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of this device in symmetrical mode.

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“…The δ-doping technique allows one to obtain an extremely sharp doping profile and a high-density-doped layer [26][27][28][29], and it is of great interest [30][31][32].…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

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“…Among the advantages of δ-FET are a high concentration of the quasi-2DEG (two-Dimensional Electronic Gas), a high breakdown voltage of the Schottky contact, and a narrow distance of the 2DEG from the gate and high transconductance [2][3][4][5]. These FETs will also offer a very high operating frequency and a very flat transconductance region [6][7][8][9][10], which is ideal for low distortion power amplification and a high electron mobility transistor due to the proximity of the delta channel to the gate [9,11,12].…”

Section: Introductionmentioning

confidence: 99%

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Oubram¹,

Gaggero‐Sager²,

Ouadou³

2011

PIER

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Abstract-According to the scaling-down theory, the ALD-FET (Atomic Layer Doping-Field Effect Transistor) structure has attracted a lot of attention in view of its uses for developing devices with very short channels and for achieving very-high-speed operation. Therefore, there is a strong need to obtain an accurate understanding of carrier transport (mobility and conductivity) in such devices. In this work, we report the carrier transport based on the electronic structure of devices. Our results include analytical expressions of both mobility and conductivity. Our analytical expressions for the mobility and conductivity allow us to analyze transport in ALD-FET. We report regions where this device operates in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of the system. The width of the Ohmic region as well as the NDR (Negative Differential Resistance) properties of the system are also characterized.

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Linear and nonlinear intersubband optical absorption coefficient and refractive index change in n-type δ-doped GaAs structure

Öztürk

Ozdemir

2013

Optics Communications

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<title>AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)</title>

Cited by 12 publications

References 0 publications

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Linear and nonlinear intersubband optical absorption coefficient and refractive index change in n-type δ-doped GaAs structure

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