&lt;title&gt;Application aspects of the Si-CARL bilayer process&lt;/title&gt;

Sebald, Michael; Berthold, J.; Beyer, M.; Leuschner, Rainer; Noelscher, Christoph; Scheler, Ulrich; Sezi, Recai; Ahne, Hellmut; Birkle, S.

doi:10.1117/12.46374

Cited by 17 publications

(3 citation statements)

References 2 publications

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“…20 The oligomers are bifunctional, having a reactive amine group at each end of the chain, and deliver multiple silicon atoms to each binding site in the polymer. However, the oligomers are so large that a great deal of additional organic material is delivered and much greater swelling occurs.…”

Section: Resultsmentioning

confidence: 99%

Silylating Reagents with High Silicon Contents for Dry-Developed Positive-Tone Resists for Extreme-UV (13.5 nm) and Deep-UV (248 nm) Microlithography

Wheeler

Scharrer

Kubiak

et al. 1996

ACS Symposium Series

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Recent results in the use of disilanes as silylating reagents for near-surface imaging with deep-UV (248 nm) and EUV (13.5 nm) lithography are reported. A relatively thin imaging layer of a photo-cross-linking resist is spun over a thicker layer of hard-baked resist that functions as a planarizing layer and antireflective coating. Photoinduced acid generation and subsequent heating crosslinks and renders exposed areas impermeable to an aminodisilane that reacts with the unexposed regions. Subsequent silylation and reactive ion etching afford a positive-tone image. The use of disilanes introduces a higher concentration of silicon into the polymer than is possible with silicon reagents that incorporate only one silicon atom per reactive site. The higher silicon content in the silylated polymer increases etching selectivity between exposed and unexposed regions and thereby increases the contrast. Additional improvements that help to minimize flow during silylation are also discussed, including the addition of bifunctional disilanes. We have resolved high aspect ratio, very high quality 0.20 μm line and space patterns at 248 nm with a stepper having a numerical aperture (NA)= 0.53, and have resolved ≤ 0.15 μm line and spaces at 13.5 nm.Design rules for microlithography are moving into the sub 0.35 μm regime. This generates more stringent requirements for the entire lithographic process. Deep UV (248 nm) lithography has demonstrated the ability to print sub 0.35 μm features. However, deep UV lithography at 248 nm will probably be unable to meet the design rules that are expected to be needed at the turn of the century. To meet these needs, exposure tools will probably employ shorter wavelength radiations. Extreme ultraviolet lithography, EUVL, at 13.5 nm has demonstrated the capability to print very fine features, and it is predicted that the trend to shorter wavelengths will eventually employ 13.5 nm radiation about the year 2010. Unfortunately, radiation at 0097-6156/96/062O-O399$12.00/0

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Section: Resultsmentioning

confidence: 99%

Silylating Reagents with High Silicon Contents for Dry-Developed Positive-Tone Resists for Extreme-UV (13.5 nm) and Deep-UV (248 nm) Microlithography

Wheeler

Scharrer

Kubiak

et al. 1996

ACS Symposium Series

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“…Only a few polymaleimides have been investigated their applicability as thermally stable resist materials in DUV region based on the chemical amplification concept. Those polymaleimides are the styrenic copolymers of N-(t-butyloxycarbonyl)maleimide (t-BOCMI) [2][3][4][5], t-BOC protected N-(phydroxyphenyl)maleimide [b], and N-(t-butoxy)maleimide (t-BuOMI). [7] Recently we have reported the functional polymers of N-tosyloxymaleimide (TsOMI) which generate p-toluenesulfonic acid (TsOH) effectively by DUV irradiation.…”

Section: Introductionmentioning

confidence: 99%

Terpolymers of tosyloxymaleimide for application as a polymeric photoacid generator in single-component resists.

Chung

Koo

Ahn³

1994

J. Photopol. Sci. Technol.

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Terpolymers of sulfonyloxymaleimides have been prepared as a new class of polymeric photoacid generator and their photochemical and thermal properties were investigated. The styrenic copolymers of N-tosyloxymaleimide (TsOMI) produced p-toluenesulfonic acid (TsOH) in solid state by deep UV irradiation and the amount of generated acid was determined by using a colorimetric method. Two terpolymers of TsOMI and p-(t-butyloxycarbonyloxy)styrene showed the capability of a single-component, chemically amplified resist system in deep UV region. Positive-and negative-tone images were obtained with sensitivity of 50 mJ/cm2.

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“…Comprehensively, the acid diffusion within the matrix and acid evaporation out of the matrix could be quantified. Results are used to improve the lithographic performance of the dual-wavelength CARL® [4,5] resist system presently used at Infineon Technologies. …”

mentioning

confidence: 99%

Novel Diffusion Analysis in Advanced Chemically Amplified DUV Resists Using Photometric Methods.

Richter

Hien

Sebald

1999

J. Photopol. Sci. Technol.

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The demand for smaller device dimensions in microlithography drives the need to understand and control diffusion during photoresist processing. In advanced chemically amplified systems the lithographic performance is strongly influenced by diffusion of acid and base additives. Photoacid generation efficiencies and diffusion parameters were quantitatively evaluated using an established in situ photometric method employing a pH-sensitive organic dye. [ 1-3 ] A kinetic model for the post-exposure bake (PEB) has been proposed, transferred to molecular reaction dynamics and extanded to transport properties. The experimental data for this model have been obtained from UV/VIS spectroscopy measurements. The UV/VIS data show that a photoacid loss reaction during post-exposure bake has to be taken into account. Rough estimations of the acid diffusion lengths are given by the rate of the diffusion-controlled neutralization reaction for blanket exposures. The acid diffusion range was minimized, as the temperature of pre baking was raised and the PEB temperature was reduced. Chemical kinetics around the glass transition temperature of the resist are discussed. Furthermore, a face-to-face contact experiment (wafer-sandwich) involving the dye was used to determine acid loss during PEB. Comprehensively, the acid diffusion within the matrix and acid evaporation out of the matrix could be quantified. Results are used to improve the lithographic performance of the dual-wavelength CARL® [4,5] resist system presently used at Infineon Technologies.

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<title>Application aspects of the Si-CARL bilayer process</title>

Cited by 17 publications

References 2 publications

Silylating Reagents with High Silicon Contents for Dry-Developed Positive-Tone Resists for Extreme-UV (13.5 nm) and Deep-UV (248 nm) Microlithography

Silylating Reagents with High Silicon Contents for Dry-Developed Positive-Tone Resists for Extreme-UV (13.5 nm) and Deep-UV (248 nm) Microlithography

Terpolymers of tosyloxymaleimide for application as a polymeric photoacid generator in single-component resists.

Novel Diffusion Analysis in Advanced Chemically Amplified DUV Resists Using Photometric Methods.

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