&lt;title&gt;CMOS position-sensitive photodetectors (PSDs) for integrated sensor systems&lt;/title&gt;

Maekynen, Anssi Jaakko; Benten, Harold; Ruotsalainen, T.; Rahkonen, Timo; Kostamovaara, J.

doi:10.1117/12.287729

Cited by 12 publications

(3 citation statements)

References 11 publications

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“…The main area of application of PSDs is in precision optical alignment, such as biomedical applications, robotics, process control, medical instrumentation, and position information systems [ 36 – 39 ]. Other attractive applications include surface profiling, rotation monitoring, telephone information systems, angle measurements, triangulation-based distance sensors, guidance systems and roles where precise automated control is required [ 40 – 43 ]. PSDs based on the LPE can provide continuous optical information over large areas with no internal discontinuities, which is the major advantage over arrayed discrete devices such as charge coupled devices and photodiodes.…”

Section: Introductionmentioning

confidence: 99%

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

Wang

2010

Sensors

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The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

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Section: Introductionmentioning

confidence: 99%

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

Wang

2010

Sensors

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“…The lateral photovoltage (LPV) was found to be strongly dependent on the light spot position with respect to electrodes, which allows fabricating position-sensitive detectors for sensing even minor displacements [6]. The range of application of such detectors is quite extensive and involves automatic control, positioning, surface profiling and other systems [7,8,9]. Surprisingly, the LPE appeared to be sensitive to external magnetic fields [10,11,12,13].…”

Section: Introductionmentioning

confidence: 99%

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Волков

Рауцкий

Tarasov

et al. 2018

Physica E: Low-dimensional Systems and Nanostructures

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We demonstrate that the lateral photovoltaic effect in the Fe/SiO 2 /p-Si structure not only strongly depends on the optical radiation wavelength and temperature, but is also sensitive to external magnetic fields. The magnetic field lowers the absolute value of photovoltage regardless of the wavelength and temperature; however, the relative photovoltage variation significantly depends on these parameters. The lateral photovoltage is observed both on the Fe film and Si substrate sides and results from separation of photoinduced electrons and holes in a built-in electric field of the Schottky barrier with their subsequent diffusion to the structure in the lateral direction from the illuminated area. The observed features in the behavior of the lateral photovoltaic effect originate from the variation in the light absorption coefficient of the semiconductor and the related quantum efficiency upon light wavelength variation. In addition, an important role is played by the change in the characteristics of the Schottky barrier at the redistribution of optically generated carriers and temperature variation. The effect of the magnetic field is attributed to the Lorentz force, which bends trajectories of carriers drifting under the action of the Schottky barrier field and, consequently, suppresses the lateral photovoltaic effect.

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“…The general characteristics of these detectors are: -conventional LEP's have high linearity (99.7 -99.9 %) within the dynamic range which can be many times the spot size. They require a very uniform resistive layer with large sheet resistance (>10 kc1)/square) ', which is not possible in standard CMOS; -quad-cells have a simple layout, straightforward output read-out and feature high accuracy within the linearity range comparable to the spot size5; -multi-pixel arrays present very high linearity (-99.9 %) for a large number of pixels 6,7 Resistive linear arrays using the current division method 8 offerextra flexibility compared to the LEP. Moreover, the output currents are larger than for the latter.…”

Section: Introductionmentioning

confidence: 99%

Various layouts of analog CMOS optical position-sensitive detectors

1999

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We report on the fabrication and characterization of analog multi-pixel optical position-sensitive detectors (PSD's) for sensing the two-dimensional position of a light spot over the sensor area. Computer simulations were performed to understand the influence of the geometrical layout of the device on the linearity of response. Standard CMOS technology was chosen for fabrication so that the detectors are compatible with reliable low-cost and low-power electronics for integration with processing electronics. Three chessboard-like 5x5-pixel structures, with different pixel layouts have been implemented. The response linearity was calculated and measured over 80% of the detector active area. It was shown that chessboard-like structures are not suitable for spot diameters below 2 pixels. For a light spot diameter comparable with the device size, the best linearity of response -RMS deviation of less than 4% -among all three structures is achieved by the structure with vertical phototransistors as the photo-sensing elements. We also implemented a PSD with two complementary spiral structures, providing sensing for both coordinates in each pixel. With this layout we achieved RMS non-linearity of less than 3.5% for a spot size comparable with pixel size in close agreement to the simulations. The computer model indicates that the non-linearity for all structures studied decreases with the number of pixels.

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<title>CMOS position-sensitive photodetectors (PSDs) for integrated sensor systems</title>

Cited by 12 publications

References 11 publications

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Various layouts of analog CMOS optical position-sensitive detectors

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