&lt;title&gt;Compact Z-pinch EUV source for photolithography&lt;/title&gt;

Schriever, Guido; Rahe, Manfred; Stamm, Uwe; Basting, D.; Khristoforov, O B; Vinokhodov, A Yu; Borisov, V. M.

doi:10.1117/12.436716

Cited by 12 publications

(5 citation statements)

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“…Here we report data from gas discharge EUV sources based on a so-called Z-pinches [2][3][4][5]. The Z-pinch gas discharge produced plasma allows to access a wide range of discharge parameters needed to match the EUV emission parameters to the requirements oftable 1.…”

Section: Gas-discharge Produced Plasma Z-pinch Sourcementioning

confidence: 99%

Extreme ultraviolet sources and measurement tools for EUV-lithography and system development

Gaebel¹,

Kleinschmidt²,

Schriever³

et al. 2003

Fourth International Symposium on Laser Precision Microfabrication

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The availability of extreme ultraviolet (EUV) light sources, measurement tools and integrated test systems is of major importance for the development ofEUV lithography for use in large volume chip production starting in 2009. The EUV steppers will require an output power from the EUV source of 115 W at 1 3.5 nm for economic chip production. In addition, the EUV source must achieve rigorous specifications for debris emission and source facing condenser optics lifetime, source component lifetime, repetition rate, pulse-energy stability, plasma size and spatial emission stability, and spectral purity as a result oflithography system design constraints. Significant progress has been made in the development of laser produced plasma and gas discharge produced plasma based EUV sources as well as metrology tools to measure EUV radiation characteristics. As of today, the first EUV sources and measurement equipment are available to be used for EUV system, mask, optics and component as well as lithography process development. With the commercial availability of EU V-plasma sources other applications using short wavelength, XUV-radiation will be feasible in a laboratory environment. Some examples of XUV applications are discussed.

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Section: Gas-discharge Produced Plasma Z-pinch Sourcementioning

confidence: 99%

Extreme ultraviolet sources and measurement tools for EUV-lithography and system development

Gaebel¹,

Kleinschmidt²,

Schriever³

et al. 2003

Fourth International Symposium on Laser Precision Microfabrication

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“…This effect has been described as the pinch-effect [1]. In Figure 1 you see one possible geometrical arrangement for the plasma generation -other geometries were considered as well [2].…”

Section: Physical Principlesmentioning

confidence: 99%

EUV Sources for Lithographic Applications

Schriever

Zink

2008

Optik & Photonik

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Semiconductor device manufacturing is currently using excimer lasers as the light source for lithographic structuring. The wavelength of these ArF lasers is 193 nm and the high volume manufacturing of structures with 45 nm has started already. To further shrink the structure size to 32 nm and beyond, a reduction of the used wavelength is required for physical reasons. The next technology will be the extreme ultraviolet (EUV) lithography using light with 13.5 nm wavelength. Efficient optical elements like multi layer optics were developed in the last years using improvements in thin film technology on large area substrates with roughness in the sub-nanometer range. Sources for such light are plasma based sources in which the plasmas are generated either by electrical gas discharges or by pulsed laser radiation. In this paper we describe the discharge produced plasma (DPP) sources only because of their advantages concerning efficiency, simplicity, reliability and maturity.

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“…A typical design for such a discharge unit which generates pinch plasmas with high efficiency is currently under investigation at XTREME technologies. It is a Z-pinch preionized by a surface discharge [4,5] (see figure 2). The plasma generator consists of two cylindrical electrodes that are properly shaped to achieve the desired plasma size and emission angle.…”

Section: Physical Principle Of Gdpp Euv Sourcesmentioning

confidence: 99%

Extreme ultraviolet light sources for use in semiconductor lithography—state of the art and future development

Stamm¹

2004

J. Phys. D: Appl. Phys.

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This paper gives an overview of the development status and plans of extreme ultraviolet (EUV) light sources at XTREME technologies, a joint venture of Lambda Physik AG, Göttingen and JENOPTIK LOS GmbH, Jena, Germany. Results for gas discharge-produced plasma (GDPP) and laser-produced plasma (LPP), the two major technologies in EUV sources, are presented.The GDPP EUV sources use the Z-pinch principle with efficient sliding-discharge pre-ionization. First prototypes of commercial gas discharge sources with an EUV power of 35 W in 2π sr have already been integrated into EUV microsteppers. These sources are equipped with a debris-filter which supports an optics lifetime exceeding 100 million pulses at 1 kHz repetition rate. The same lifetime was achieved for the components of the discharge system itself.The progress in the development of high-power discharge sources based on xenon resulted in an EUV power of 200 W into a 2π sr solid angle, in continuous operation, at 4.5 kHz repetition rate, by implementation of porous-metal cooling technology. The available intermediate focus (IF) power is 22 W taking into account experimentally verified losses in a 1.8 sr source collector module. The usable IF power depends on the etendue of the optical system of the EUV scanner. For the current size of the EUV emitting plasma the etendue acceptance factor may be below 0.5. The currently usable IF power with 1.8 sr collector mirror may therefore be about 10 W.Z-pinch discharge sources with Sn as the emitter have been developed as a more efficient alternative to xenon fuelled sources. Tin sources showed a conversion efficiency (CE) that was double that of xenon. EUV power of 400 W in 2π sr has been generated at only 4.5 kHz repetition rate. The available IF power is 44 W. Estimates evaluating the tin source performance reveal the potential for achieving high-volume manufacturing (HVM) power specification by using existing technology.Because of their small plasma size and the rather simple thermal management in the EUV generator the LPP EUV sources are investigated as alternatives to GDPP sources to achieve sufficient power for HVM with EUV lithography. These sources use xenon-jet target systems and high-power pulsed lasers as plasma excitation drivers developed at XTREME technologies. The maximum CE from laser power into EUV in-band power is 1.0% into a solid angle of 2π. Experimentally, 7 W EUV radiation is generated at 13.5 nm in a 2π sr solid angle with 0.7 kW laser power on the target. The small source volume of <0.5 mm diameter will allow large collection angles of 5 sr. The corresponding usable IF power is estimated to be 2.3 W. With the full power of the installed 1.2 kW laser driver 10 W EUV power in 2π sr is expected. LPP sources with tin targets are estimated to achieve nearly 10 W IF power with existing driver laser technology.GDPP and LPP sources still compete for the technology of HVM sources for EUV lithography. Each of these technologies has its challenges. The optimization potential of the etendue of the optical syste...

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<title>Compact Z-pinch EUV source for photolithography</title>

Cited by 12 publications

References 0 publications

Extreme ultraviolet sources and measurement tools for EUV-lithography and system development

Extreme ultraviolet sources and measurement tools for EUV-lithography and system development

EUV Sources for Lithographic Applications

Extreme ultraviolet light sources for use in semiconductor lithography—state of the art and future development

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