<title>Defect structure changes in the single Si-crystals after irradiation by high-energy electrons and long natural aging by high-resolution three-crystal x-ray diffractometry</title>

Abstract

Methods of two-and three-crystal X-ray high-resolution diffractometry were used to investigate structural changes in Сz-Si single crystals irradiated with high-energy electrons (Е=18 МeV). The results of experimental investigation were interpreted by means of a generalized dynamic theory of X-ray diffraction in real crystals with randomly distributed microdefects of various types and a damaged surface layer. As dominant defects, disc-shaped and spherical clusters -SiO 2 precipitates, as well as dislocation loops were used.

Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

“…On the whole, the model of defective structure comprising several types of dominant microdefects yields a more detailed description of the shape and characteristics of diffraction reflection curves, the profiles of isodiffuse lines. This allowed obtaining a scenario of possible structural reconstructions in defective system of silicon crystals irradiated with highenergy electrons [4,[9][10][11].…”

“…Among the methods of crystal research the methods based on the analysis of the angular distributing of X-ray intensity are the most informative [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The determination of concentrations and sizes of microdefects, their type (interstitial or vacancy) and symmetry of static distortion fields formed by them, is possible from the analysis of the angular intensity distributions [3][4][5][6][7][8][9][10][11][12].…”

“…Irradiation of silicon by high-energy particles considerably influences on decomposition processes of oxygen solid solution in Si and, consequently, changes the character of X-ray scattering [9][10][11]. The presence of a great number of different types of defects in the irradiated samples significantly complicates construction of the model of imperfect structure, allowing to correctly describe the obtained experimental results [15][16][17][18][19][20][21][22][23].…”

“…Therefore, it is necessary to choose the basic types of defects that provide dominant contribution to the diffraction pattern. A similar attempt to construct such a model was undertaken in the papers [9][10][11], where assumptions of the imperfect system supposing a presence of dislocation loops, ellipsoid clusters (SiO 2 precipitates), point defects and thermal diffuse scattering in the crystal are used.…”