The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high-energy electrons (18 MeV) has been performed by methods of the highresolution X-ray diffraction. The concentrations and average sizes of dislocation loops and oxygen precipitates have been determined by using the combined treatment of reciprocal space maps and rocking curves based on the analytical formulas of the statistical dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed microdefects of several types.

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Methods of two-and three-crystal X-ray high-resolution diffractometry were used to investigate structural changes in Сz-Si single crystals irradiated with high-energy electrons (Е=18 МeV). The results of experimental investigation were interpreted by means of a generalized dynamic theory of X-ray diffraction in real crystals with randomly distributed microdefects of various types and a damaged surface layer. As dominant defects, disc-shaped and spherical clusters -SiO 2 precipitates, as well as dislocation loops were used.

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