&lt;title&gt;Doped GaSe nonlinear crystals&lt;/title&gt;

Tikhomirov, Alexander A.; Andreev, Yu. M.; Ланский, Г. В.; Voevodina, O. V.; Sarkisov, S. Yu.

doi:10.1117/12.677065

Cited by 5 publications

(3 citation statements)

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“…This means that doping level written in mass% relates to more than three times lower number of Ga atoms substituted by In atoms in GaSe:In (without intercalation) solution than that for Se atoms substituted by S atoms in GaSe:S solution. Besides this, significant intercalation of In into interlayer space was found in GaSe:In crystals [23]. Thus, the combination of these factors promises for much smaller shift of transparency curve for GaSe:In crystals in comparison with that in GaSe:S solid solutions.…”

Section: Resultsmentioning

confidence: 94%

“…For example, as high hardness as 14 kg/mm 2 has been determined for the crystal #17 with 1.23 mass% of In. We presume that higher hardness is induced by significant In intercalation into interlayer space in GaSe:In crystals [23]. To retain the planarity of cleaved samples, we mounted them on metal plates with appropriate ellipsoidal apertures with dimensions 5×15 mm 2 for optical access.…”

Section: Crystal Characterizationmentioning

confidence: 99%

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SHG in doped GaSe:In crystals

Feng¹,

Kang²,

Wu³

et al. 2008

Opt. Express

107

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Optical transmission range and phase matching (PM) conditions for second harmonic generation (SHG) of Er3+:YSGG and CO2 laser in indium doped GaSe:In(0.1, 1.23, 2.32 mass%) are studied in comparison with these in pure and sulfur doped GaSe:S(0.09, 0.5, 2.2, 3 mass%) crystals. No changes in transparency curve are found in GaSe crystals up to 2.32 mass% indium content, but as small change as 0.18 degrees in PM angle for 2.79 microm Er3+:YSGG laser SHG and approximately 0.06 degrees for 9.58 microm CO2 laser emission line SHG are detected. PM properties of the crystals are evaluated as a function of temperature over the range from -165 to 230 degrees C. The value of dtheta/dT, the change in PM angle with variation of temperature, is found to be very small for GaSe:In crystals. While for SHG of Er3+:YSGG laser, dtheta/dT =22"/1 degrees C only, it is as small as -4.9"/1 degrees C for that of CO2 laser radiation. Linear variation of PM angle with temperature increasing is an indicator of absence of crystals structure transformation within temperature range from -165 to 230 degrees C. Thus, application of GaSe:In solid solutions in high average power nonlinear optical systems seems to be prospective.

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Section: Resultsmentioning

confidence: 94%

Section: Crystal Characterizationmentioning

confidence: 99%

SHG in doped GaSe:In crystals

Feng¹,

Kang²,

Wu³

et al. 2008

Opt. Express

107

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“…GaSe is an excellent matrix material for doping with various elements. An original εpolytype structure of GaSe was strengthened by doping; the physical properties responsible for the frequency conversion efficiency were also modified [6][7][8][9][10][11][12][13]. Although the THz generation and optical properities in GaSe have been examined in detail [2,14,15], few studies focused on the optical properties in THz range and the THz generation by doped GaSe crystals.…”

Section: Introductionmentioning

confidence: 99%

Optimal Te-doping in GaSe for non-linear applications

Ku¹,

Chu²,

Luo³

et al. 2012

Opt. Express

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Centimeter-sized Te-doped GaSe ingots were grown from the charge compositions of GaSe with nominals 0.05, 0.1, 0.5, 1, and 3 mass% Te, which were identified as ε-GaSe:Te (0.01, 0.07, 0.38, 0.67, and 2.07 mass%) single crystals. The evolution of the absorption peaks of the phonon modes E'(2) (≈ 0.584 THz) and E"(2) (1.77 THz) on Te-doping in GaSe:Te crystals was studied by THz time-domain spectroscopy. This study proposes that the evolution of both E'(2) and E''(2) absorption peaks correlates well with the optical quality of Te-doped GaSe crystals, which was confirmed by experimental results on the efficiency of THz generation by optical rectification. Maximal intensity of the absorption peak of the rigid layer mode E'(2) is proposed as a criterion for identification of optimal Te-doping in GaSe crystals.

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