<title>Fabrication and properties of two-dimensional hybrid array sensor on epitaxial n-InAs films</title>

Abstract

Properties of n-epilayer InAs-Si02 interface with various chemical treatments of InAs surface have beeii studied.Epilayer InAs films (Ndl O' cm-3 ) of 5 -7 micron thickness has been grovn on n substrate with doping level 3. 1 0 18 cm -. High quality properties of MIS -structures have been observed : surface state density < 1 0 I 1 cm-2 eV-' , flat band voltage 2 -5 V for Si02 120 nm thickness . The array of photosensitive 128x128 MIS -structures with 1fl2 03 gate has been mounted on silicon readout multiplexer by flip -chip method . The detectivity of InAscells in range oftemperatures 80-100 K is more than 2IO'2cmHz 1/2w-i.

Quantitative characterization of vapour adsorption on solid surfaces and estimation of emissivity of solids using narrow-band short-wave infrared thermography

“…In 1998, the article (Kurishev et al, 1998) was published advertising IR camera based on the cooled two-dimensional (128×128) array of photo-sensitive charge injection devices (CID); CID-cells of the FPA were composed of the InAs-based metal-insulator-semiconductor (MIS) structures. Explanation of physical principle of the MIS-CID FPA detector functioning was given, for instance, in (Kurishev et al, 1996;Vainer et al, 2000;Vainer, 2004); it is as follows.…”

Limitary operation conditions affecting CID short-wave infrared detector performance

“…In the present work, we primarily deal with detectors functioning in the spectral region lying within or close to the InAs fundamental absorption band. A description of one of the physical principles used in the design of InAs-based focal plane array (FPA) detectors can be found in [9,10]. The longwave spectral sensitivity limit of such detectors is determined by the band-gap width of the InAs epitaxial layer, whose impurity content should be made as low as possible.…”