<title>Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates</title>

Abstract

We have been presented crystallographic growth models of GaN thin films on the a -A1203 substrates based on the crystal chemistry: electoronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the some aspects of epitaxial growth.