&lt;title&gt;High fill-factor CCD imager with high frame-rate readout&lt;/title&gt;

Sauer, Donald J.; Hseuh, Fu-Lung; Shallcross, F. V.; Meray, Grazyna M.; Levine, Peter; Hughes, Gary W.; Pellegrino, Joseph G.

doi:10.1117/12.20994

Cited by 12 publications

(6 citation statements)

References 2 publications

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“…A more attractive approach for the user is the kind of built-in blooming control first developed at what used to be RCA Laboratories (now Sarnoff Corporation) in the 1970s (Sauer et al, 1990). This feature is available from almost all the manufacturers of scientific CCDs, including e2v technologies, Fairchild Imaging, and Semiconductor Technology Associates.…”

Section: Blooming Controlmentioning

confidence: 98%

CCD Technology

Burke¹,

Jorden²,

Vu³

2006

Exp Astron

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Charge-coupled devices (CCDs) continue to reign supreme in the realm of imaging out to 1 μm, with the steady improvement of performance and the introduction of innovative features. This review is a survey of recent developments in the technology and the current limits on performance. Device packaging for large, tiled focal-plane arrays is also described. Comparisons between CCDs and the emerging CMOS imagers are highlighted in terms of process technology and performance.

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Section: Blooming Controlmentioning

confidence: 98%

CCD Technology

Burke¹,

Jorden²,

Vu³

2006

Exp Astron

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“…Lateral antiblooming pixels [2] use adjacent, non-photoactive regions where excess signal electrons are swept away. These non-photoactive regions degrade the pixel fill factor.…”

Section: Lateral Antibloomingmentioning

confidence: 99%

<title>Surface channel clocked antiblooming technique for area-array CCD image sensors</title>

et al. 1992

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Implementation ofover-illumination protection on area array image sensors has typically involved significant modifications to device design and/or processing. These modifications have caused degradation of device performance, for example, lateral antiblooming reduces fill factor and vertical antiblooming reduces near infra-red (NIR) quantum efficiency (QE).Clocked antiblooming is a technique that does not require any processing or design changes and does not degrade fill factor or MR QE. The technique involves clocking the imaging phases into, and out of, inversion during the integration time and relying on the surface recombination of electrons and holes to eliminate excess signal charge.The technique described in this paper allows clocked antiblooming with surface channel operation thus permitting large full well packets with small pixel geometries. Although surface channel operation is less efficient in terms of charge transfer efficiency, there are some applications where maximum full well charge storage capability is important.

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“…Antiblooming can be implemented using vertical [1], clocked [2] or lateral [3] approaches. Each of these approaches has advantages and disadvantages{4] that make them more or less suitable depending on the application and constraints.…”

Section: Introductionmentioning

confidence: 99%

<title>Two-poly 128x128-element area array with lateral antiblooming</title>

1993

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An image sensor with lateral antiblooming for overillumination protection is discussed. The device is implemented using a double poly, NMOS buried channel CCD process with a buried drain that runs adjacent to the channel stops. The antiblooming barrier is formed by a surface channel region adjacent to the buried drain. Typically these devices are implemented using a three poly process but by eliminating the exposure control requirement, a two poly process technology can be used. The area array pixels are built using four phase CCD technology maximizing charge handling capacity. The surface channel antiblooming barrier confines the charge to buried channel operation.

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<title>High fill-factor CCD imager with high frame-rate readout</title>

Cited by 12 publications

References 2 publications

CCD Technology

CCD Technology

<title>Surface channel clocked antiblooming technique for area-array CCD image sensors</title>

<title>Two-poly 128x128-element area array with lateral antiblooming</title>

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