<title>Investigation of regimes of structural defect accumulation and relaxation on silicon surface under periodic-pulse laser radiation</title>

Abstract

The paper pursues an experimental investigation on solid-phase destruction of thin surface silicon layer (h1 O' cm) in vacuum, related to accumulation of dislocations under periodic action of short pulses. It has been concluded that the destruction of sample surface will be governed by competition of processes of dislocation growth and relaxation. It has been shown that the destruction of surface is caused by the requisite number N of laser pulses. The plots of N against power density and pulse repetition period have been constructed.