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The paper presents an investigation of deformation response of monocrystalline silicon surface to the action of short laser pulses in the air and in vacuum P 1 0-2 Ton. An anomalously continuous change of the surface relief was identified on irradiation in the air. The observable phenomenon is explained by oxidation of surface layer, enriched with defects.

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The paper pursues an experimental investigation on solid-phase destruction of thin surface silicon layer (h1 O' cm) in vacuum, related to accumulation of dislocations under periodic action of short pulses. It has been concluded that the destruction of sample surface will be governed by competition of processes of dislocation growth and relaxation. It has been shown that the destruction of surface is caused by the requisite number N of laser pulses. The plots of N against power density and pulse repetition period have been constructed.

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