<title>Investigations and modeling of physical processes in high-density information recording with the help of inorganic resists</title>

Chalcogenide glass resists for lithography

“…By choosing the chG with different optical band gap E g opt , it is possible to obtain registering media with sensitivity to Uv, viS and niR parts of spectrum. The advantages of this method are (Kostyoukevych et al, 1995): (i) increased light sensitivity of the media under the influence of sharp focused laser irradiation; and (ii) paths with substantially smaller width than the size of the laser light spot. These features are introduced presumably by the local heating of the resist under irradiation with laser beam of high power density.…”

“…Particular advantages of electron resists based on chG-ag structures are (Kostyoukevych et al, 1995):…”

Microelectronic Interconnections and Assembly

“…Easily dissolved in various alkaline etchants Ch VS layers after photostimulated interaction with metal have good resistive properties to this etchants [3,6,17,18,24,35,42,72,[88][89][90][91][92]. Selective etching properties ofChVS layers were investigated in detail also in many works [3,14,16,17,18,23,71,72,88,[93][94][95][96][97][98].…”

“…The dependence of dissolution of Asa~ resistive layers from the time of etching is presented in Fig.13 ( exposme with integral irradiation of Hg lamp, H = 2 J/em 2 ) [88 ]. The dependence of dissolution of Asa~ resistive layers from the time of etching is presented in Fig.13 ( exposme with integral irradiation of Hg lamp, H = 2 J/em 2 ) [88 ].…”

“…In X-ray lithography 0.2 IUJlline/space pattern was obtained, as well SO nm wide fine lines formed by utilizing Fresnel diffi'action [ 67 ]. In laser lithography it was possible to obtain 0.2 IUJl lines [16,22,88 ]. Holographic gratings with spatial frequencies up to 3600 mm-I were also obtained with the help of Ch VS based inorganic resists [ 24,27 ].…”