<title>Isochronal annealing of radiation defects in p-type silicon during irradiating with 8 MeV electrons</title>

Abstract

The local inadiation and the method ofbalk photo-e.rn.f. measurement were used for a study ofirradiation defects in p-type single silicon irradiated with 8 MeV energy electrons. On the basis of experimental end theoretical studies it was concluded that in irradiating p-type silicon with 8 MeVenergy electrons the share of atomic cascades in radiation damage production begins to prevail over diffusion. Annealing results have shown that in this case it was possible to create tetra vacancies just like the primary defects are formed. Creation of small disordered areas is not excluded.