In this contribution the Monte Carlo method is used to compute the distributions of vacancies with depth in silicon irradiated by relativistic electron beams. The model of N-body interactions in a collision cascade that advances in isotropic continuum was incorporated into the Monte Carlo scheme of successive collisions to obtain depth distributions of vacancies, interstitial atoms, and vacancy clusters produced by 1 -I 0 MeV electrons in silicon. The model developed permits to obtain the statistically averaged space distributions of defects and thennal spikes. Besides the model explains the yield of clusters during sputtering. Defects formed by 3-electrons and primary knock-in atoms are also taken into account.

The local inadiation and the method ofbalk photo-e.rn.f. measurement were used for a study ofirradiation defects in p-type single silicon irradiated with 8 MeV energy electrons. On the basis of experimental end theoretical studies it was concluded that in irradiating p-type silicon with 8 MeVenergy electrons the share of atomic cascades in radiation damage production begins to prevail over diffusion. Annealing results have shown that in this case it was possible to create tetra vacancies just like the primary defects are formed. Creation of small disordered areas is not excluded.