Irradiation of silicon with relativistic electron beams by Monte Carlo many-body interaction model of radiation damage

Abstract

In this contribution the Monte Carlo method is used to compute the distributions of vacancies with depth in silicon irradiated by relativistic electron beams. The model of N-body interactions in a collision cascade that advances in isotropic continuum was incorporated into the Monte Carlo scheme of successive collisions to obtain depth distributions of vacancies, interstitial atoms, and vacancy clusters produced by 1 -I 0 MeV electrons in silicon. The model developed permits to obtain the statistically averaged space distributions of defects and thennal spikes. Besides the model explains the yield of clusters during sputtering. Defects formed by 3-electrons and primary knock-in atoms are also taken into account.

<title>Isochronal annealing of radiation defects in p-type silicon during irradiating with 8 MeV electrons</title>

“…On the basis of [7,17] and the results shown in this report we suppose that in Si single crystals when irradiating with 8 Me V electrons it is possible athermal formation ofvacancy cluster like V4 or small disordered areas. In any case, when irradiating Si single crystals with 8 MeVelectrons the share of atomic cascades in radiation damage production begins to prevail over diffusion.…”