&lt;title&gt;Low-cost uncooled microbolometer imaging system for dual use&lt;/title&gt;

Butler, Neal R.; Blackwell, Richard J.; Murphy, Robert; Silva, Raymond J.; Marshall, Charles A.

doi:10.1117/12.218256

Cited by 30 publications

(7 citation statements)

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“…The voltage response is proportional to αRI b θ where θ is the temperature change relative to the average temperature, as defined in section 3. Resistor values as high as 15 k (Butler et al 1995) are achieved. The NEP is lowered with increasing current.…”

Section: Other Thermal Detectorsmentioning

confidence: 97%

“…The temperature coefficient of resistance α of typical resistor materials applied amounts to 0.002 K −1 for metals and −0.003 K −1 for semiconductors. Large resistance values (R) of several 10 k seem to be achievable with oxide materials such as VO x (Butler et al 1995). The voltage response is proportional to αRI b θ where θ is the temperature change relative to the average temperature, as defined in section 3.…”

Section: Other Thermal Detectorsmentioning

confidence: 99%

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Micromachined infrared detectors based on pyroelectric thin films

2001

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The state of the art of thin-film pyroelectric infrared (IR) detectors is reviewed covering device physics, material performance, micro-fabrication and device examples. Emphasis is given to special issues related to thin films, such as small heat capacities and the substrate influence on the pyroelectric properties. For the latter, an overview of the hitherto reported values is given. Examples of micromachined IR detectors based on pyroelectric thin films are described. The ultimate limit of micromachined thermal IR detectors is estimated for uncooled operation. It is concluded that the best pyroelectric thin films achieved to date are in principle sufficiently good to approach this limit, meaning that the present performance of pyroelectric thin-film focal plane arrays can still be improved by more than a factor of 10. A comparison of the different principles for IR detection shows that pyroelectricity is indeed one of the most competitive principles for uncooled IR detection. The major obstacle hindering quick industrialization is the fabrication complexity.

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Section: Other Thermal Detectorsmentioning

confidence: 97%

Section: Other Thermal Detectorsmentioning

confidence: 99%

Micromachined infrared detectors based on pyroelectric thin films

2001

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“…In [77] THz imaging with microbolometer arrays was demonstrated; the array elements were IR microbolometers made of vanadium oxide. For illumination, a CO 2 laser was used, although QCL has also been demonstrated in [78]. Several institutions such as CEA-LETI [79], Institut Natinoal d'Optique (INO) [80], and Swiss Terahertz [81] are actively developing microbolometers-based FPAs.…”

Section: Thz Camerasmentioning

confidence: 99%

Non-Contact, Non-Destructive Testing in Various Industrial Sectors with Terahertz Technology

Tao

Fitzgerald

Wallace

2020

Sensors

178

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In this article, we survey various non-contact, non-destructive testing methods by way of terahertz (THz) spectroscopy and imaging designed for use in various industrial sectors. A brief overview of the working principles of THz spectroscopy and imaging is provided, followed by a survey of selected applications from three industries—the building and construction industry, the energy and power industry, and the manufacturing industry. Material characterization, thickness measurement, and defect/corrosion assessment are demonstrated through the examples presented. The article concludes with a discussion of novel spectroscopy and imaging devices and techniques that are expected to accelerate industry adoption of THz systems.

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“…New process technology, new material, and improved structure of pyroelectric detectors are under development to improve performance of pyroelectric detectors [29]- [31]. [32], [33] The operating principle of bolometer detectors is that the temperature change caused by the absorption of IR radiation leads to a change in electrical resistance of the material. Unlike the photoconductive detectors, the resistance change in bolometer detectors is caused directly by the heating of material instead of direct photon-lattice interaction and carrier generation.…”

Section: B Photoconductive (Pc) Detectorsmentioning

confidence: 99%

Focal-plane-arrays and CMOS readout techniques of infrared imaging systems

Hsieh

Jih

et al. 1997

IEEE Trans. Circuits Syst. Video Technol.

146

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A discussion of CMOS readout technologies for infrared (IR) imaging systems is presented. First, the description of various types of IR detector materials and structures is given. The advances of detector fabrication technology and microelectronics process technology have led to the development of large format array of IR imaging detectors. For such large IR FPA's which is the critical component of the advanced infrared imaging system, general requirement and specifications are described. To support a good interface between FPA and downstream signal processing stage, both conventional and recently developed CMOS readout techniques are presented and discussed. Finally, future development directions including the smart focal plane concept are also introduced.

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<title>Low-cost uncooled microbolometer imaging system for dual use</title>

Cited by 30 publications

References 0 publications

Micromachined infrared detectors based on pyroelectric thin films

Micromachined infrared detectors based on pyroelectric thin films

Non-Contact, Non-Destructive Testing in Various Industrial Sectors with Terahertz Technology

Focal-plane-arrays and CMOS readout techniques of infrared imaging systems

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