&lt;title&gt;Practical 0.35-um i-line lithography&lt;/title&gt;

Luehrmann, Paul Frank; Wittekoek, S.; Hansen, Steven G.

doi:10.1117/12.175435

Cited by 2 publications

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“…Resist users often employ modeling as an aid for new resist evaluations. On the exposure tool side, modeling has become an indispensable part of the optimization of the numerical aperture and partial coherence of a stepper [43][44][45] and in the understanding of the print bias between dense and isolated lines [46]. The use of optical proximity correction software requires rules on how to perform the corrections, which are often generated with the help of lithography simulation [47], or they use lithography models directly for the corrections.…”

Section: B Process Development Toolmentioning

confidence: 99%

Thirty years of lithography simulation

Mack

2005

Optical Microlithography XVIII

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Thirty years ago Rick Dill and his team at IBM published the first account of lithography simulation -the accurate description of semiconductor optical lithography by mathematical equations. Since then, lithography simulation has grown dramatically in importance in four important areas: as a research tool, as a development tool, as a manufacturing tool, and as a learning tool. In this paper, the history of lithography simulations is traced from its roots to today's indispensable tools for lithographic technology development. Along the way, an attempt will be made to define the true value of lithography simulation to the semiconductor industry.

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Section: B Process Development Toolmentioning

confidence: 99%

Thirty years of lithography simulation

Mack

2005

Optical Microlithography XVIII

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“…Resist users often employ modeling as an aid for new resist evaluations. On the exposure tool side, modeling has become an indispensable part of the optimization of the numerical aperture and partial coherence of a stepper [50][51][52] and in the understanding ofthe print bias between dense and isolated lines [53]. The use of optical proximity correction software requires rules on how to perform the corrections, which are often generated with the help of lithography simulation [54].…”

Section: Process Development Toolmentioning

confidence: 99%

<title>Lithographic simulation: a review</title>

Mack

2001

SPIE Proceedings

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A review of the current state of the art in optical and electron beam lithography simulation is presented. Basic physical models are described and examples are given. In addition, rigorous electromagnetic simulation for mask topography is shown and the use of statistical modeling to predict feature size distributions in manufacturing is described. Finally, numerous examples of the use of lithography simulation and its impact on the semiconductor industry are offered.

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<title>Practical 0.35-um i-line lithography</title>

Cited by 2 publications

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Thirty years of lithography simulation

Thirty years of lithography simulation

<title>Lithographic simulation: a review</title>

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