2006
DOI: 10.1117/12.676302
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<title>SiO<formula><inf><roman>2</roman></inf></formula> on CNT: molecular dynamics simulation</title>

Abstract: Carbon nanotubes are the basic element of modern nanoelectronic devices. One of the most promising their applications is a carbon nanotube based conducting channel in field-effect transistor with Si02 dielectric deposited on the nanotube. Simulation of SiO, on CNT technology and some properties of that system were studied by means of molecular dynamics method. MM+ interatomic potential was used for calculations.

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Cited by 3 publications
(2 citation statements)
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“…In both cases, calcinated Si-Zr glass micro-structures excel in LIDT, by potentially having better heat transfer characteristics (SiO2-ZrO2 composites [39] 1 to 3 W/m*K). Also, the minimum bond energy for Si-O (89 kcal/mol) bond in glass is higher than for C-C (80 kcal/mol) or C-O (79 kcal/mol) bonds that constitute the weaker link [40].…”
Section: Morphologymentioning
confidence: 94%
“…In both cases, calcinated Si-Zr glass micro-structures excel in LIDT, by potentially having better heat transfer characteristics (SiO2-ZrO2 composites [39] 1 to 3 W/m*K). Also, the minimum bond energy for Si-O (89 kcal/mol) bond in glass is higher than for C-C (80 kcal/mol) or C-O (79 kcal/mol) bonds that constitute the weaker link [40].…”
Section: Morphologymentioning
confidence: 94%
“…In both cases, calcinated Si-Zr glass micro-structures excel in LIDT by potentially having better heat transfer characteristics (SiO 2 -ZrO 2 composites [40] 1 to 3 W/m*K). In addition, the minimum bond energy for Si-O (89 kcal/mol) bond in glass is higher than for C-C (80 kcal/mol) or C-O (79 kcal/mol) bonds that constitute the weaker link [41].…”
Section: Morphologymentioning
confidence: 94%