1981
DOI: 10.1117/12.965830
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<title>Texas Instruments (TI) 800X800 Charge-Coupled Device (CCD) Image Sensor</title>

Abstract: The design and performance of the Texas Instruments 800 x 800 CCD imagerkare described. This device is fabricated utilizing a three phase, three level polysilicon gate process. The chip is thinned to -8 pm and is employed in the rear illumination mode. Detailed measurements of device performance including dark current as a function of temperature, linearity, and noise are presented. The device is coated with a UV downconverting phosphor which allows imaging with the same device over an extremely wide optical b… Show more

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Cited by 14 publications
(5 citation statements)
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“…The mission was launched on the Discovery shuttle on 7 April 1993. This WLC was built with a single serrated external occulter (Fort et al, 1978) and a Charged Coupled Device (CCD) for the detector (Blouke et al, 1981). The cadence of image acquisition was very good, and it was able to acquire simultaneous observations of a CME in WL and Ly-α.…”
Section: Spartan 201-1 White-light Coronagraphmentioning
confidence: 99%
See 1 more Smart Citation
“…The mission was launched on the Discovery shuttle on 7 April 1993. This WLC was built with a single serrated external occulter (Fort et al, 1978) and a Charged Coupled Device (CCD) for the detector (Blouke et al, 1981). The cadence of image acquisition was very good, and it was able to acquire simultaneous observations of a CME in WL and Ly-α.…”
Section: Spartan 201-1 White-light Coronagraphmentioning
confidence: 99%
“…The detectors for LASCO and EIT are 1Kx1K charge coupled devices (CCD; Blouke et al, 1981;Janesick and Blouke, 1995) manufactured from the same lots. The LASCO CCDs were frontside detectors, meaning that the light was passing through the electronic structures deposited on the silicon wafer.…”
Section: Spartan 201-1 White-light Coronagraphmentioning
confidence: 99%
“…In 1984, during system-level thermal vacuum testing of the WF/PC instrument, the coronene-coated CCDs developed severe instabilities caused by defects in the CCD surface [4][5][6]. These defects trapped positive charge at the Si-SiO2 interface and depleted the surface, leading to low QE as some photogenerated charge was trapped in the backside potential well.…”
Section: Quantum Efficiency Hysteresis In Back-illuminated Ccdsmentioning
confidence: 99%
“…Extremely low readout noise levels of the order of eight electrons rms have been demonstrated making these devices highly suitable for low-light-level measurements (cf. Blouke et al 1981;Gunn and Westphal 1981). Some aspects of the performance characteristics require attention when these chips are used for optical spectroscopy.…”
Section: Interface Potentialmentioning
confidence: 99%