&lt;title&gt;The 1x384 hybrid linear infrared focal plane arrays on InAs MOS structure for spectrometric applications&lt;/title&gt;

Bazovkin, V. M.; Valisheva, N. A.; Guzev, A. A.; Ефимов, В. М.; Kovchavtsev, A. P.; Kuryshev, G. L.; Lee, I. I.; Stroganov, Anton

doi:10.1117/12.517247

Cited by 3 publications

(5 citation statements)

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“…Previously, we realized the fluorinated anodic layer (FAL)/InAs interface with minimum D it ∼ (2-5) × 10 10 eV –1 cm –2 at 77 K by anodic oxidation in liquid and dry fluorine-containing mediums. A medical-cooled CID camera based on In 2 O 3 /SiO 2 /FAL/InAs MIS structures with high-contrast images of two-dimensional thermal patterns with a resolution up to 7 mK was fabricated. , The sharp influence of fluorine on the D it of the AL/InAs interface was established . The FAL chemical composition, the morphology of the InAs surface and FAL/InAs interface, as well as electrophysical parameters of Au/FAL/InAs metal-oxide–semiconductor (MOS) structures were studied. − The D it and the composition of FAL dependences on fluorine concentration were revealed.…”

Section: Introductionmentioning

confidence: 99%

“…A medical-cooled CID camera based on In 2 O 3 /SiO 2 / FAL/InAs MIS structures with high-contrast images of twodimensional thermal patterns with a resolution up to 7 mK was fabricated. 7,8 The sharp influence of fluorine on the D it of the AL/InAs interface was established. 9 The FAL chemical composition, the morphology of the InAs surface and FAL/ InAs interface, as well as electrophysical parameters of Au/ FAL/InAs metal-oxide−semiconductor (MOS) structures were studied.…”

Section: ■ Introductionmentioning

confidence: 99%

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Passivation Mechanism of the Native Oxide/InAs Interface by Fluorine

et al. 2017

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Comparative experimental and theoretical studies of the fluorine/oxygen ratio influence on the structural and electronic properties of the anodic layer (AL)/InAs interface by XPS, HRTEM, C–V (77K) measurements and ab initio calculation of fluorine and oxygen adsorption on the InAs(111)A-(1 × 1) unreconstructed surface were performed. The well-ordered transition layer (TL), composed of indium and arsenic oxyfluorides, and extension of the interplanar distance at the fluorinated anodic layer (FAL)/InAs interface were experimentally revealed. The theoretical modeling of AL/InAs and FAL/InAs interfaces showed that the fluorinated TR formation removes the InAs surface distortion, whereas the In(InAs)–F–As(FAL) and In(InAs)–O–As(FAL) bond formation is a reason for the interplanar distance increase between FAL and the InAs surface. The decrease of the interface state density in the InAs bandgap and the Fermi level unpinning at the FAL/InAs interface result from the positive charge increase on FAL arsenic atoms near the InAs surface during the As–F bonds formation, while the electron accumulation on oxygen atoms and InAs subsurface arsenic atoms is the reason for the states appearance in the InAs bandgap at the anodic (native) oxide/InAs interface.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Passivation Mechanism of the Native Oxide/InAs Interface by Fluorine

et al. 2017

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“…Controlled growth of fluorine-containing anodic oxide layers (FAOL) in different liquid and gas media is one of the ways to modify a semiconductor surface to create metal–insulator–semiconductor (MIS) structures. For InAs, the method provides low DOS (<5 × 10 10 eV –1 cm –2 at 77 K) in Au/FAOL/InAs(111)A and In 2 O 3 /SiO 2 /FAOL/InAs(111)A MIS structures. − For GaAs, plasmochemical oxidation of the semiconductor surface in oxygen and CF 4 medium reduces the DOS at the FAOL/GaAs interface 50 times (to a level ∼5 × 10 11 eV –1 cm –2 at 300 K) compared to the anodic oxide layers (AOL)/GaAs interface formed without fluorine . The FAOL composition analysis by the X-ray photoelectron spectroscopy method shows that the transition region at the FAOL/A III B V interface consists of fluorides and oxyfluorides of semiconductor elements, − and its formation can explain an elimination of interface states in the band gap.…”

Section: Introductionmentioning

confidence: 99%

“…For InAs, the method provides low DOS (<5 × 10 10 eV –1 cm –2 at 77 K) in Au/FAOL/InAs(111)A and In 2 O 3 /SiO 2 /FAOL/InAs(111)A MIS structures. − For GaAs, plasmochemical oxidation of the semiconductor surface in oxygen and CF 4 medium reduces the DOS at the FAOL/GaAs interface 50 times (to a level ∼5 × 10 11 eV –1 cm –2 at 300 K) compared to the anodic oxide layers (AOL)/GaAs interface formed without fluorine . The FAOL composition analysis by the X-ray photoelectron spectroscopy method shows that the transition region at the FAOL/A III B V interface consists of fluorides and oxyfluorides of semiconductor elements, − and its formation can explain an elimination of interface states in the band gap. Note that the complex composition of the AOL/In(Ga)As interface transition region considerably complicates finding out the microscopic nature of interface states.…”

Section: Introductionmentioning

confidence: 99%

Fluorine and Oxygen Adsorption and Their Coadsorption on the (111) Surface of InAs and GaAs

et al. 2016

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Oxygen and fluorine adsorption and their coadsorption on the (111) unreconstructed surface of semiconductors InAs and GaAs were studied using the projector augmented-wave method with the generalized gradient approximation for the exchange−correlation functional and hybrid functional approach. The energetically preferable adsorbate sites on the surface were determined. It is shown that fluorine adsorption above surface cations on the A III B V (111)A-(1 × 1) unreconstructed surface leads to a removal of the surface state formed by cation p z -orbitals and to an unpinning of the Fermi level, whereas oxygen adsorption induces additional surface states in the band gap. The influence of fluorine and oxygen coadsorption and also fluorine concentration on the surface states in the band gap is discussed. It is shown that oxygen-induced surface states are completely or partially removed from the band gap by fluorine coadsorption if it forms bonds with cation surface atoms involved in an interaction with oxygen. The increase of fluorine concentration leads to considerable changes of the near-surface-layer structure due to the penetration of both electronegative adsorbates into the substrate and affects the electron properties of oxygen/ A III B V (111) interface.

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“…In a number of works [7,8] and references therein, it was shown that the fluorination of GaAs, InAs, and other A III B V semiconductor surfaces leads to a significant decrease in the DSS. It was found in [9][10][11][12][13][14] that an intermediate fluorine-containing anodic oxide layer is formed at the oxide-semiconductor interface, which contributes to a decrease in the density of surface states. Moreover, it was shown that the formed oxide layers on the semiconductor surface contain Group III element fluorides and Group V element oxyfluorides.…”

Section: Introductionmentioning

confidence: 99%

Role of Oxygen and Fluorine in Passivation of the GaSb(111) Surface Depending on Its Termination

et al. 2022

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The mechanism of the chemical bonding of oxygen and fluorine on the GaSb(111) surface depending on its termination is studied by the projector augmented-waves method within density functional theory. It is shown that on an unreconstructed (111) surface with a cation termination, the adsorption of fluorine leads to the removal of surface states from the band gap. The binding energy of fluorine on the cation-terminated surface in the most preferable Ga-T position is lower by ~0.4 eV than that of oxygen, but it is significantly lower (by ~0.8 eV) on the anion-terminated surface. We demonstrate that the mechanism of chemical bonding of electronegative adsorbates with the surface has an ionic–covalent character. The covalence of the O–Sb bond is higher than the F–Sb one, and it is higher than both O–Ga and F–Ga bonds. Trends in the change in the electronic structure of the GaSb(111) surface upon adsorption of fluorine and oxygen are discussed. It is found that an increase in the oxygen concentration on the Sb-terminated GaSb(111) surface promotes a decrease in the density of surface states in the band gap.

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<title>The 1x384 hybrid linear infrared focal plane arrays on InAs MOS structure for spectrometric applications</title>

Abstract: Technology and design of linear lx3 84 MIS photodetectors on InAs homoepitaxial substrate are developed. The experimental results on JR focal plane arrays (JR FPA) intended for rapid JR spectrometers with registration time 0,1 -50 ms are presented.

Cited by 3 publications

References 1 publication

Passivation Mechanism of the Native Oxide/InAs Interface by Fluorine

Passivation Mechanism of the Native Oxide/InAs Interface by Fluorine

Fluorine and Oxygen Adsorption and Their Coadsorption on the (111) Surface of InAs and GaAs

Role of Oxygen and Fluorine in Passivation of the GaSb(111) Surface Depending on Its Termination

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