Luminescence and electrical properties of Mg x Zn 1-x Te alloys

Phosphorus‐doped Zn1–x Mgx Te crystals with Mg concentration x of 0 to 0.33 have been grown by vertical Bridgman method. The lattice constant, transmissivity and band‐gap energy as a function of x have been determined. The linear relation has been found between the lattice constant or band‐gap energy and x . The number of precipitates in Zn1–x Mgx Te single crystals seems to be less than that in ZnTe grown from VGF method. The p ‐type Zn1–x Mgx Te (x ≤ 0.19) crystals with carrier concentration of ∼1017 cm–3 were obtained independent of x . (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

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confidence: 99%

Optical and electrical properties of phosphorus‐doped ZnMgTe bulk crystals grown by Bridgman method

Saito¹,

So²,

Tanaka³

et al. 2006

“…On the other hand, the PL spectra of Zn 1-x Mg x Te (x = 0.11 and 0.19) are characterized by two distinctive luminescence bands denoted by A and B in the figure. No significant deep emissions in the wave length range longer than 580 nm are found in the spectra, although it was pointed out previously [4] that P atoms give rise to other defects acting like deep recombination centers and broad luminescence appears in the wavelength region from 650 to 720 nm. In order to investigate the nature of A and B bands, their excitation power dependences were measured.…”

Section: Introductionmentioning

confidence: 67%

“…With respect to bulk growth of Zn 1-x Mg x Te crystals, several investigations have so far been carried out mainly using Bridgman technique [4][5][6][7][8]. However, there are only a few works [4] on P-doped Zn 1-x Mg x Te bulk crystals that are very important for fabricating ZnTe based LEDs. Therefore, systematic characterization should be done for the P-doped bulk crystals.…”

Section: Introductionmentioning

confidence: 99%

Phosphorus‐doped ZnMgTe bulk crystals grown by Vertical Bridgman Method

Saito¹,

Kinoshita²,

Tanaka³

et al. 2006

Phosphorus-doped Zn 1-x Mg x Te (0 ≤ x ≤ 0.31) bulk crystals with zinc-blende structure were grown by vertical Bridgman technique. Single crystalline wafers cut from the ingots have been systematically characterized by energy dispersive X-ray analysis, photoluminescence, optical reflection and transmission, and Hall measurements together with the evaluation of electroless Pd electrode to Zn 0.9 Mg 0.1 Te. The linear increase in the lattice constant and the band-gap energy with x was confirmed. In photoluminescence spectra at 4.2 K, two distinct band-edge luminescence peaks were observed, whereas there are no deep emission bands. These peaks were assigned to be bound exciton emission due to neutral P acceptor and a P acceptor related free-to-bound transition emission. Electroless Pd electrode shows the specific contact resistance lower than 5×10

“…Considerable works have been devoted to the study of the device applications as well as to the physical properties of the Mg-based II-VI alloys [2][3][4][5][6]. However, the Mg x Cd 1−x Se system has been studied more extensively than the other systems of the Mg-based II-VI alloys in spite of its suitability for optoelectronic device applications.…”

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confidence: 99%

Composition and temperature dependence of band gap and lattice constants of Mg _x Cd _{1–
x} Se single crystals

Kim

Park

Jeong

et al. 2006

The composition and temperature dependence of the band gap and the lattice constants of the MgxCd1−xSe crystals was investigated in the composition range of 0.00 ≤ x ≤ 0.46 and in the temperature range of 11 to 290 K. The lattice constants showed a composition dependence decreasing linearly with increasing composition x, and also showed a temperature dependence that the relative variation of the lattice constants with temperature is somewhat different from each other for all the crystals. The temperature dependent behavior of the lattice constants was also observed with an inverse trend in the temperature dependence of the band gaps. The temperature dependence of the band gaps was well fitted by the empirical Varshni equation for all the investigated compositions. The composition dependence of the band gaps was represented by the linear relationship of Eg(x) = 1.742 + 1.813 x for 290 K and Eg(x) = 1.828 + 1.871 x for 11 K.