Optical and electrical properties of phosphorus‐doped ZnMgTe bulk crystals grown by Bridgman method

Abstract

Phosphorus‐doped Zn1–x Mgx Te crystals with Mg concentration x of 0 to 0.33 have been grown by vertical Bridgman method. The lattice constant, transmissivity and band‐gap energy as a function of x have been determined. The linear relation has been found between the lattice constant or band‐gap energy and x . The number of precipitates in Zn1–x Mgx Te single crystals seems to be less than that in ZnTe grown from VGF method. The p ‐type Zn1–x Mgx Te (x ≤ 0.19) crystals with carrier concentration of ∼1017 cm–3 were obtained independent of x . (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Temperature dependence of photoluminescence from P‐doped ZnMgTe bulk crystals of high quality grown by Bridgman method

“…It was confirmed that the relationship between x and the peak energy of RT emission band is consistent with x dependent band gap obtained using RT cathodoluminescence measurement [5]. Figure 4 shows the temperature dependent peak energy of A-band.…”

“…There are only a few works on P-doped Zn 1-x Mg x Te bulk crystals [3][4][5] that are very important for fabricating ZnTe based LED. So far, we have prepared P-doped Zn 1-x Mg x Te crystals by means of Bridgman method and also clarified the fundamental properties such as Mg composition (x), optical and electrical properties, lattice constant, and so on [4,5]. Very recently, we have successfully prepared the high crystalline quality of P-doped Zn 1-x Mg x Te crystal for ZnTe based LED [6].…”

“…２ Experimental P-doped Zn 1-x Mg x Te crystals were grown by vertical Bridgman method in almost the same manner as was employed in the previous studies [4][5][6]. Zn, Mg, Te and Zn 3 P 2 were used as source materials.…”

Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method

“…With respect to bulk growth of Zn 1 À x Mg x Te crystals, several investigations have so far been carried out mainly using the Bridgman technique [1,2,[4][5][6][7][8][9], which is simple and leads to low cost. However, there are only a few works on phosphorus (P)-doped Zn 1 À x Mg x Te bulk crystals [4,6] except for our previous studies [2,8,9].…”

“…Zn 1 À x Mg x Te ternary alloy is a promising material for light emitting diodes (LEDs) with green or blue emission since the fundamental energy gap of Zn 1 À x Mg x Te can be varied through Mg composition from 2.26 to 3.1 eV [1] or 3.2 eV [2]. Furthermore, Zn 1 À x Mg x Te is expected to be one of the best materials as a cladding layer and a transparent substrate for improving the performance of ZnTe-based pure green LED because it is expected to form a type-I heterostructure with ZnTe [3].…”