Luminescence and energy-transfer mechanisms in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mtext>Eu</mml:mtext></mml:mrow><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>-doped GaN epitaxial films

Higuchi, Shunichi; Ishizumi, Atsushi; Sawahata, Junji; Akimoto, Katsuhiro; Kanemitsu, Yoshihiko

doi:10.1103/physrevb.81.035207

Cited by 26 publications

(10 citation statements)

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Note that the emission peak of $633.9 nm, which is labeled peak (or site) C, is closely correlated to peak A. As previously reported, 3, 6,10,11,13,15,19,20 it was also confirmed that peaks A and C were excited only by the above bandgap energy but peak B was excited not only by the above but also the below bandgap energy. Figure 2 shows the relation between the Mg concentration and the integrated PL intensity of the Eu 3þ luminescence from the GaN:(Eu, Mg).…”

supporting

confidence: 83%

Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy

Takagi

Suwa

Sekiguchi

et al. 2011

Applied Physics Letters

View full text Add to dashboard Cite

The effect of Mg codoping on the Eu3+ luminescence in GaN was investigated by photoluminescence measurements. Two notable emission peaks associated with the 5D0→7F2 transition in the Eu3+ ions were governed by Mg codopants, which corresponded to the change of the dominant peak wavelength from 622.3 to 620.3 nm with an increase in Mg concentration. An optimal amount of Mg also led to enhancement of approximately 20 times of the Eu3+ luminescence. These results indicated that the Mg codopants selectively activated the optical site of 620.3 nm emission due to the elimination of nonradiative deexcitation paths from the 5D0 state.

show abstract

supporting

confidence: 83%

Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy

Takagi

Suwa

Sekiguchi

et al. 2011

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…There are at least two types of major optically active Eu 3 þ sites as reported previously [23,[26][27][28][29][30][31]. One of them has the emission wavelength of 620 nm and can only be excited by the above bandgap excitation.…”

Section: Effects Of Mg Co-doping On Pl Propertiesmentioning

confidence: 83%

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

Wakahara

Sekiguchi

Okada

et al. 2012

Journal of Luminescence

View full text Add to dashboard Cite

“…Similar results have been reported from other groups. 18,27 Although the PL intensities are comparable for sites A and B for 370 nm excitation, it resulted from that the slit of the monochromator was expanded to obtain the sufficient excitation power. Therefore, 370 nm-excitation is included in both above and below bandgap excitation.…”

Section: Resultsmentioning

confidence: 99%

Emission enhancement mechanism of GaN:Eu by Mg codoping

Sekiguchi

Takagi

Otani

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Mg codoping into Eu-doped GaN strongly affects the two dominant optical sites A (620.3 nm) and B (622.3 nm) and dramatically improves the optical characteristics obtained from Eu 3þ ions. To clarify the mechanism of the enhanced emission, the effects of the Mg concentration on the excitation and emission processes were evaluated by considering the excitation power dependence of photoluminescence (PL) and time-resolved PL at various temperatures. The excitation cross section r ex , which reflected the excitation process, did not depend on the Mg concentration but strongly on the optical site, which was attributed to the different energy transfer processes of the two optical sites. r ex for site A was three times larger than that for site B, indicating higher excitation efficiency for site A. Mg codoping dramatically increased the number of Eu ions in site A that remain active at room temperature (RT) and the 5 D 0 lifetime at RT, indicating the suppression of nonradiative components during the emission process. Therefore, the optical properties were markedly enhanced by Mg codoping. V C 2013 American Institute of Physics. [http://dx.

show abstract

Luminescence and energy-transfer mechanisms inEu3+-doped GaN epitaxial films

Cited by 26 publications

References 55 publications

Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy

Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

Emission enhancement mechanism of GaN:Eu by Mg codoping

Contact Info

Product

Resources

About