2011
DOI: 10.1134/s0030400x11020135
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Luminescence and thermally stimulated recombination processes in Li6Gd(BO3)3:Ce3+ crystals

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Cited by 19 publications
(14 citation statements)
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“…Both the intrinsic emission and luminescence of Ce 3 þ and Eu 3 þ impurity ions in LGBO were previously studied at various temperatures ranged from 1.5 to 500 K upon excitation with UV-photons [2][3][4], VUV-radiation [1], and X-rays [5]. Several research works were devoted to study of LGBO crystals in respect of macro-and micro-defects in as-grown crystals [6], radiation induced defects [7], and short-living defects that are responsible for transient optical absorption [8].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Both the intrinsic emission and luminescence of Ce 3 þ and Eu 3 þ impurity ions in LGBO were previously studied at various temperatures ranged from 1.5 to 500 K upon excitation with UV-photons [2][3][4], VUV-radiation [1], and X-rays [5]. Several research works were devoted to study of LGBO crystals in respect of macro-and micro-defects in as-grown crystals [6], radiation induced defects [7], and short-living defects that are responsible for transient optical absorption [8].…”
Section: Introductionmentioning
confidence: 99%
“…3 þ ion in LGBO crystal is determined only by the radiative transitions of 5d-4f 1 from the lowest energy excited state [5]. The excitation of the impurity luminescence in LGBO crystal occurs through the transfer of electronic excitation energy along the chains of Gd 3 þ ions.…”
mentioning
confidence: 99%
“…One process involves the migration of electronic excitations along the chains of Gd 3 þ ions, while the other process is due intracenter radiative relaxation of the excited state of individual Gd 3 þ ion. It has been shown [53], that η can act as a measure of the perfection of LGBO single crystals: the greater the η the more perfect single crystal. At E ex ¼ 5:5 eV (Fig.…”
Section: Temperature Dependence Of Pl Intensitymentioning
confidence: 99%
“…8 (curves 4.5 (SC) and 5.0 (SC)) it follows that the ratio of the PL intensities η¼I(500 K)/I(100 K) is about 3. Interpretation of the temperature dependence of the intensity of the intrinsic PL for LGBO was done using a model of two competing processes of transfer of electronic excitation energy [53]. One process involves the migration of electronic excitations along the chains of Gd 3 þ ions, while the other process is due intracenter radiative relaxation of the excited state of individual Gd 3 þ ion.…”
Section: Temperature Dependence Of Pl Intensitymentioning
confidence: 99%
“…[12][13][14][15]. Intrinsic luminescence of LGBO crystals and luminescence of Ce 3 þ and Eu 3 þ impurities in these crystals have been investigated in detail for different types of excitation over a wide temperature range from 4 to 500 K. These LGBO emissions have been studied not only upon selective photoexcitation in the UV [1,4,3,16,17], vacuum UV (VUV) [18][19][20][21] and soft X-rays [22,23] energy regions, but the laboratory excitation sources of ionizing radiation as well [24][25][26]. Optical properties of LGBO crystals in the temperature range of 77-300 K were studied in Refs.…”
Section: Introductionmentioning
confidence: 99%