2021
DOI: 10.3390/nano11030690
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Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature

Abstract: Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room temperature from self-assembled strain-free GaAs quantum dots (QDs) in refilled AlGaAs nanoholes on (001)GaAs substrate. Two major obstacles for room temperature operation are observed. The first is a strong radiative background from the GaAs substrate and the second… Show more

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Cited by 4 publications
(2 citation statements)
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“…In addition, exciton annihilation can take place via thermal escape of charge carriers from a QD (see Equations ( 2) and ( 3)), which is already addressed in ref. [18]. The rate of thermal escape is described by…”
Section: Exciton Annihilationmentioning
confidence: 99%
See 1 more Smart Citation
“…In addition, exciton annihilation can take place via thermal escape of charge carriers from a QD (see Equations ( 2) and ( 3)), which is already addressed in ref. [18]. The rate of thermal escape is described by…”
Section: Exciton Annihilationmentioning
confidence: 99%
“…However, with increasing temperature T, a broadening of the QD excitonic lines is reported as well as the formation of phonon sidebands [7][8][9][10][11]. Furthermore, a substantial degradation of the intensity of the emission from various types of the QDs at higher temperatures is observed [7,8,[12][13][14][15][16][17][18]. Both effects seriously interfere with an application of QDs in optical quantum information technology at elevated temperatures.…”
Section: Introductionmentioning
confidence: 99%