Luminescence from europium, europium–chromium, erbium, samarium and terbium‐activated powder, ceramic and polycrystalline cubic boron nitride

Shishonok, E. M.; Leonchik, S. V.; Steeds, John W

doi:10.1002/pssb.200642428

Cited by 12 publications

(6 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…out binders, can be sintered within half hour or less. Recently, in a number of studies [20][21][22][23][24][25][26], some attempts have been made to investigate the luminescent properties of cBN ceramics and compacts doped or activated by rare earth elements, in order to develop visible light emitters and phosphors that can withstand extreme environmental conditions. It is known that beryllium is an effective p-type dopant for poly and single cBN crystals [19], however, there is a considerable safety issue due to its high toxicity and fast oxidation.…”

Section: Introductionmentioning

confidence: 99%

Formation of flower-like MgO crystal and its effect on the photoluminescence of Mg-cBN ceramics

Wang

Zhu

et al. 2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Formation of flower-like MgO crystal and its effect on the photoluminescence of Mg-cBN ceramics

Wang

Zhu

et al. 2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…There have also been studies of rare earth doping into other nitrides. BN‐based phosphors have been proposed for use in extreme environments such as high temperatures and high radiation levels 8 . Tm‐, Tb‐, Sm‐, Eu‐, or Yb‐doped AlN films have been produced using reactive radiofrequency sputtering and show strong photoluminescence and cathodoluminescence 9 .…”

Section: Introductionmentioning

confidence: 99%

Nonoxide Sol–Gel Synthesis of Terbium‐Doped Silicon Nitride Phosphors

Hassan

Carravetta

Hector

et al. 2010

Journal of the American Ceramic Society

View full text Add to dashboard Cite

Exposure of solutions of Tb(N(SiMe 3 ) 2 ) 3 with SiCl(NEt 2 ) 3 in THF to dry ammonia results in polymeric xerogels. Heating these gels in ammonia leads to amorphous Tb:SiN x phosphors that exhibit bright green luminescence under UV irradiation. MAS-NMR and combustion analysis show the phosphors to be silicon nitride materials analogous to those typically produced by solgel routes. Photoluminescence behavior is similar to that of Tb:SiN x or Tb:SiO 2 films produced by ion implantation that show good electroluminescence activity.

show abstract

“…We need to prove that the corresponding bands belong to electronic transitions of the thulium ion. We should point out that, compared with other rare earth elements which we used earlier to activate cBN [17,18], the luminescence that can be assigned to radiative transitions of the Tm 3+ ions is not very intense. The same trends were observed in [19].…”

mentioning

confidence: 96%

“…The high thermal conductivity of cBN should ensure efficient heat dissipation from the component base of optoelectronic devices based on cBN. References [17,18] report successful activation of cBN by the elements Eu, Tb, Sm, Gd, and Ce.…”

mentioning

confidence: 98%

Luminescence of thulium-activated cubic boron nitride

et al. 2008

Self Cite

View full text Add to dashboard Cite

UDC (535.37+543.42):548Under high pressure and temperature conditions, we have obtained samples of thulium-activated cubic boron nitride in the form of micropowders, ceramics, and polycrystals activated by thulium in the presence of aluminum. We studied the cathodoluminescence (CL), photoluminescence (PL), and photoluminescence excitation spectra of the samples. In the luminescence spectra we observe structured bands with maxima at ~370, ~475, 660, and ~800 nm, assigned to electronic transitions in the triply charged thulium ions. We have established that the most efficient method for excitation of "blue" luminescence at ~475 nm for thulium ions in cBN is excitation by an electron beam. The cBN samples synthesized in the presence of Al have photoluminescence spectra with a more complex structure compared with samples not containing Al, with the band of dominant intensity at about 660 nm. Hypothetically, this is a consequence of incorporation of thulium ions into the crystalline phases cBN and AlN, which are equally likely to be formed during synthesis. The observed photoluminescence spectrum of the indicated samples is the superposition of the photoluminescence spectra of the Tm 3+ ions located in the crystal fields of cBN and AlN of different symmetries. The presence in the photoluminescence excitation spectra (at 450, 490, and 660 nm) of structure, with features at wavelengths shorter than the excited photoluminescence, suggests a nonresonant mechanism for its excitation. We have established that luminescence of Tm 3+ ions is less intense than for other rare earth elements incorporated into cubic boron nitride.Introduction. Cubic boron nitride (cBN) is a semiconductor with the widest bandgap (∆ = 6.4 eV) in the A III B V group of compounds and is the closest analog to diamond. It surpasses diamond in bandgap width, thermal stability, radiation resistance, and chemical stability, the potential for forming n-type and p-type conductivities, and the ability to emit secondary electrons.Today materials are being actively studied and used that are activated by rare earth elements, in particular by thulium (Tm). Among these materials, an important position is occupied by nitrides (gallium nitride, aluminum nitride) activated by thulium, having intense emission in the blue range of the spectrum. This is why GaN and AlGaN are used in electroluminescent optical devices (blue light-emitting diodes, white light emitters, full-color displays). Tm-activated materials are used for conversion of IR emission to blue emission [1-6] and in solid-state lasers [7].Analysis of known data showed that the main peaks in the electroluminescence (EL) spectra of GaN thin films are detected at ~475 and ~800 nm, and correspond to electronic transitions from the excited states 1 G 4 and 3 F 4 to the ground state 3 H 6 . The intensity of electroluminescence increases as the applied voltage increases, while the ratio of the intensities of the bands changes in favor of the band at ~475 nm [8][9][10]. Simultaneous optical (UV) pumping and appli...

show abstract

Luminescence from europium, europium–chromium, erbium, samarium and terbium‐activated powder, ceramic and polycrystalline cubic boron nitride

Cited by 12 publications

References 24 publications

Formation of flower-like MgO crystal and its effect on the photoluminescence of Mg-cBN ceramics

Formation of flower-like MgO crystal and its effect on the photoluminescence of Mg-cBN ceramics

Nonoxide Sol–Gel Synthesis of Terbium‐Doped Silicon Nitride Phosphors

Luminescence of thulium-activated cubic boron nitride

Contact Info

Product

Resources

About