Luminescence of CuI single crystals

Никитенко, В. А.; Stoyukhin, S. G.; Popolitov, V. I.; Mininzon, Yu. M.

doi:10.1007/bf00614221

Cited by 10 publications

(9 citation statements)

References 4 publications

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“…On the high energy shoulder free exciton recombination appears at 3.06 eV. The prominent band at 2.95 eV was also observed for CuI single crystals in CL (at 420 nm for T = 80 K) and has been related to DAP recombination (see above).…”

Section: Optical Properties Of Cuimentioning

confidence: 60%

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Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Grundmann

Schein

Lorenz

et al. 2013

Phys. Status Solidi A

253

313

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Halide semiconductors stand at the very beginning of semiconductor science and technology. CuI was reported as the first transparent conductor, and the first field effect transistor was made from KBr. Although halogens are frequently used in semiconductor preparation, little use is currently made from halide semiconductors in electronics and photonics. We review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as our own work on fully transparent bipolar heterostructure diodes (p‐CuI/n‐ZnO) with high rectification of several 107 and ideality factors down to 1.5. γ‐CuI(111) thin film on glass (1 × 1 cm2) and IV‐characteristics of p‐CuI/n‐ZnO/a‐Al2O3 bipolar heterojunction diode.

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Section: Optical Properties Of Cuimentioning

confidence: 60%

“…Recombination mechanisms at T = 80 K were reported in Ref. . At low temperature, at the low energy side of the Z 1,2 lines, a rich spectrum of sharp lines has been observed and assigned to transitions due to impurities .…”

Section: Optical Properties Of Cuimentioning

confidence: 70%

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Grundmann

Schein

Lorenz

et al. 2013

Phys. Status Solidi A

253

313

View full text Add to dashboard Cite

show abstract

“…There are two significant peaks in all the spectra. One peak situated at about 405 nm, which has been proved to be due to free-exciton (FE) emission [16]. The other peak of 420 nm may be assigned to the DAP recombination.…”

Section: Methodsmentioning

confidence: 99%

Mechanism of band-edge luminescence in cuprous iodide single crystals

Gao

Liu

et al. 2014

Journal of Alloys and Compounds

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“…Such a binary compound may open the way to new applications in optoelectronic devices once the high quality single crystal can be obtained. Several methods have been reported for the crystal growth of γ-CuI, such as the high-temperature sublimation method, the sol−gel method, the flux method, the cycle-evaporation method, and the hydrothermal method. − But to our knowledge, until now, large crystals with optical quality have not been reported, and moreover, mobility of p-type CuI single crystals is rather unknown.…”

mentioning

confidence: 99%

“…The hydrothermal method, which benefits from a relatively low growth temperature and an approximate thermodynamic equilibrium growth condition, can produce crystals with low defect density and high crystallinity. However, it could hardly obtain high quality CuI crystals through conventional hydrothermal methods . One of the reasons is that it is not easy to choose a proper mineralizer for the crystal growth.…”

mentioning

confidence: 99%

Growth Strategy and Physical Properties of the High Mobility P-Type CuI Crystal

Chen

Wang

Lin

et al. 2010

Crystal Growth & Design

200

147

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Acquiring stable binary wide band-gap semiconductor (WBS) materials with high p-type mobility is essential for the development of WBS optoelectronic devices. CuI is a p-type WBS material with a large band gap (3.1 eV) and high exciton binding energy (62 meV). However, the semiconductor characteristics of the CuI single crystal are unknown due to the lack of a large sized and high quality crystal. Our approach focuses on the design of the mineralizer for the hydrothermal method to effectively control the growth habit and the impurity concentration in the crystal. A large size (15 mm Â 10 mm Â 1 mm) and high quality CuI single crystal is obtained by using a new mineralizer (NH 4 I þ KI). The crystal shows high p-type mobility (43.9 cm 2 3 V -1 3 S 1-). The strong and sharp band-edge emission at 410 nm indicates that the interband excitonic transition dominates the optical response in the spectrum. Such a binary crystalline material may open the way to new applications in optoelectronic devices.

show abstract

Luminescence of CuI single crystals

Cited by 10 publications

References 4 publications

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Mechanism of band-edge luminescence in cuprous iodide single crystals

Growth Strategy and Physical Properties of the High Mobility P-Type CuI Crystal

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