Luminescence of CuInS2

Binsma, J.J.M.; Giling, L.J.; Bloem, J.

doi:10.1016/0022-2313(82)90029-1

Cited by 115 publications

(91 citation statements)

References 24 publications

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“…The temperature dependence of the CuInS2 bandgap is reported to exhibit anomalous low-temperature behavior, like that described for all the other Cu ternary chalcogenides discussed in this section [110,111]. Refractive index data for CuInS2 over the range 0.9 to 12.0 µm has been reported by Boyd and coworkers [112].…”

Section: Optical Properties Of α α α α-Cis and β β β β-Cissupporting

confidence: 73%

“…The relationship of the effective bandgap to composition, discussed in the preceding CIS part of this section, was studied [109], and the variance between previously published values was attributed to the same effect. In particular, a decrease in the effective bandgap was observed for negative valence stoichiometry deviations ( ∆s < 0 ).The temperature dependence of the CuInS2 bandgap is reported to exhibit anomalous low-temperature behavior, like that described for all the other Cu ternary chalcogenides discussed in this section [110,111]. Refractive index data for CuInS2 over the range 0.9 to 12.0 µm has been reported by Boyd and coworkers [112].…”

supporting

confidence: 60%

“…A recent study [51] has shown that the EXAFS scattering spectrum of selenium in the compound CuIn3Se5 is best fit by a local structure model having precisely these defect proportions in the local tetrahedra surrounding Se atoms in the lattice. Further reduction in the formation enthalpy of these NDC's is predicted when they order along the [110] direction [70]. This process of NDC aggregation in the near-surface-transition layer [179] characteristic of the equilibrium indium-rich CIS β-phase [262,263].…”

Section: Heteroepitaxy Of Cis On Gaas Substratesmentioning

confidence: 91%

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Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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This project was initiated after the Boeing Company decided to terminate its photovoltaic research and development efforts, and donated some research equipment to UF. Billy Stanbery, who was part of the Boeing team, decided then to enroll at UF to pursue a Ph.D degree. As such these events constituted a rare direct technology transfer from industry to a university. This helped to preserve more than the published legacy of the solar cell efforts at Boeing, and jump-started a comprehensive, multifaceted, and multidisciplinary copper indium diselenide solar cell research effort at UF. 5-15 Micro-Raman scattering spectra of islands on two indium-rich CIS films grown on GaAs (100). The uppermost curve is from an island "pool" on a sodium-dosed film and the lower two are single and averaged spectra from isolated islands on the sample without sodium shown in Figure 5- field. It focused primarily on the physical and opto-electronic properties of the general class of I-III-VI2 and II-IV-V2 compound semiconductors. More recent reviews specifically oriented towards CIS materials and electronic properties [2][3][4][5][6] are also recommended reading for those seeking to familiarize themselves with key research results in this field.There are also a number of excellent books and reviews on photovoltaic device physics [7,8], on the general subject of solar cells and their applications [9,10], and others specifically oriented towards thin-film solar cells [11,12] Researchers have not always been careful to reserve the use of the compound designation CuInSe2 for single-phase material of the designated stoichiometry, an imprecision that is understandable in view of the difficulty in discriminating CuInSe2 from some other compounds in this material system, as will be discussed in detail elsewhere in this treatise. The compound designations such as CuInSe2 will be reserved herein for reference to single-phase material of finite solid solution extent, and multiphasic or materials of indeterminate structure composed of copper, indium, and selenium will be referred to by the customary acronym, in this case CIS. 3 This review begins with an overview of the physical properties of the principal copper ternary chalcogenides utilized for PV devices, including their thermochemistry, crystallography, and opto-electronic properties. All state-ofthe-art devices rely on alloys of these ternary compounds and employ alkali impurities, so the physical properties and effects of these additives will be presented, with an emphasis on their relevance to electronic carrier transport properties. This foundation will provide a basis from which to address the additional complexities and variability resulting from the plethora of materials processing methods and device structures which have been successfully employed to fabricate high efficiency PV devices utilizing absorbers belonging to this class of materials. Phase Chemistry of Cu-III-VI Material SystemsSignificant technological applications exist for Ag-III-VI2 compounds as non-linear optical mat...

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Section: Optical Properties Of α α α α-Cis and β β β β-Cissupporting

confidence: 73%

supporting

confidence: 60%

Section: Heteroepitaxy Of Cis On Gaas Substratesmentioning

confidence: 91%

See 1 more Smart Citation

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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“…The energy level structure of the NCs has been calculated using bulk energy parameters provided by our first principles calculations and extracted from available experimental data. [25][26][27][28][29][30][31]37 We show that the ground hole levels in these NCs have p -type symmetry and optical transitions between these levels and the ground 1S electron state of conduction band is only weakly allowed due to a low symmetry of the crystal structure of these semiconductors. As a result the intrinsic PL of these NCs should have a significant…”

Section: 36mentioning

confidence: 83%

“…25 For the A exciton, the binding energy and polariton doublet energies have been reported. [26][27][28] A binding energy of 18.5 meV has been measured in high quality CuInS 2 single crystals. 29 Masses have been estimated using measurements of diamagnetic shift.…”

Section: -24mentioning

confidence: 99%

Energy band structure ofCuInS2and optical spectra ofCuInS2nanocrystals

2015

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Using first principles calculations we describe the energy band structure of bulk CuInS 2 . The energy band parameters for the multiband effective mass approximation that describes the band edges of this semiconductor are obtained by fitting them to the first principles spectra. Within the multiband effective mass approximation we develop a theoretical description for the structure of band edge levels and optical properties of the CuInS 2 nanocrystals. For the nanocrystals of spherical shape, the optical transitions are weakly allowed between the electron and hole ground states due to the tetragonal symmetry of the crystal lattice, resulting in a large Stokes shift of photoluminescence up to 300 meV in the smallest nanocrystals. This theory of the band edge optical transitions in CuInS 2 NCs can be applied to spherical NCs made of other chalcopyrite compounds.

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Characterization of Intrinsic Defect Levels in CuInS2

Schön

Bücher

1999

phys. stat. sol. (a)

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Luminescence of CuInS2

Cited by 115 publications

References 24 publications

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Energy band structure ofCuInS2and optical spectra ofCuInS2nanocrystals

Characterization of Intrinsic Defect Levels in CuInS2

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