Luminescence of deep phosphorous and arsenic impurities in ZnSe at high pressure

Li, M. Ming; Strachan, D. J.; Ritter, T. M.; Tamargo, M. C.; Weinstein, B. A.

doi:10.1103/physrevb.50.4385

Cited by 30 publications

(16 citation statements)

References 27 publications

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“…Often, the pressure shifts of deep PL peaks are slower than that of the material's direct band gap [7], in agreement with the insensitivity to compression predicted for localized states by either Brillouin zone averaging [8] or tight binding models [9]. In contrast, recent experiments reveal that the deep PL bands in ZnSe due to P Se , As Se and the A centers of Ga and Cl shift with pressure substantially faster (ϳ2 to 6 meV͞kbar faster) than the band gap [10,11].This rapid pressure shift suggests that the pertinent deep levels [acceptors ϳ0.3 0.7 eV above the valence band edge (VBE)] become more shallow with pressure, a result that bears on p-type doping problems in II-VI materials [12,13]. However, the possible explanations of this behavior are problematic.…”

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confidence: 59%

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confidence: 59%

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Effects of Pressure on the Zn Vacancy in ZnSe: Essential Role of Lattice Relaxation for a BasicC3vDefect

Iota

Weinstein

1998

Phys. Rev. Lett.

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The photoluminescence (PL) and PL excitation (PLE) spectra of the isolated Zn vacancy ͑V Zn ͒ in ZnSe are measured under hydrostatic pressure to 50 kbar at 7 K. The PL band shifts with pressure, roughly 30% faster than the band gap. Compression decreases the Stokes shift, reflecting a reduction in the C 3y lattice relaxation around the V 2 Zn site. Defect-molecule calculations show that this arises from the dominance of spring-constant stiffening over increased Jahn-Teller coupling. We determine the V Zn configuration-coordinate diagram at high pressure. Compression deepens the energy of the V 2 Zn thermal level. [S0031-9007(98)07699-6] PACS numbers: 71.55.Gs, 62.50. + p, 78.55.Et Stokes-shifted photoluminescence (PL) bands resulting from recombination at strongly lattice-relaxed defects are common in semiconductors [1]. In ZnSe, such bands arise from, e.g., isolated Zn vacancies ͑V Zn ͒ [2], donorvacancy complexes (A centers) [1], and Se-site acceptors [3]. Although pressure experiments have been reported for a number of deep PL transitions [4,5], the results can be difficult to interpret in the presence of strong lattice relaxation [6]. Often, the pressure shifts of deep PL peaks are slower than that of the material's direct band gap [7], in agreement with the insensitivity to compression predicted for localized states by either Brillouin zone averaging [8] or tight binding models [9]. In contrast, recent experiments reveal that the deep PL bands in ZnSe due to P Se , As Se and the A centers of Ga and Cl shift with pressure substantially faster (ϳ2 to 6 meV͞kbar faster) than the band gap [10,11].This rapid pressure shift suggests that the pertinent deep levels [acceptors ϳ0.3 0.7 eV above the valence band edge (VBE)] become more shallow with pressure, a result that bears on p-type doping problems in II-VI materials [12,13]. However, the possible explanations of this behavior are problematic. Either (i) the VBE moves rapidly to higher absolute energy with pressurein disagreement with theory [14]; (ii) the deep acceptor states shift rapidly to lower energy (in fact, faster than the VBE by ϳ22 to 26 meV͞kbar)-despite strong localization; or (iii) the lattice relaxation at defect sites decreases with pressure-counterintuitive to the expected increase in electron-phonon coupling due to enhanced orbital overlap.To resolve these issues, we perform experiments and calculations that explore the influence of lattice relaxation on the pressure behavior of the PL and PL excitation (PLE) spectra of the V Zn center in ZnSe. This deep defect is prototypical. In the standard tight binding picture, the V Zn levels are delimiters for the bound states of deep defects on the Zn sublattice [7,9]. Its V 2 Zn charge state is subject to a strong C 3y Jahn-Teller distortion [2]. We present pressure data on the V Zn optical levels that can be understood only by taking explicit account of lattice relaxation changes. Considering the delimiting nature of the V Zn levels, our findings bear on a wide range of cation-substitutional localized ...

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confidence: 59%

supporting

confidence: 59%

Effects of Pressure on the Zn Vacancy in ZnSe: Essential Role of Lattice Relaxation for a BasicC3vDefect

Iota

Weinstein

1998

Phys. Rev. Lett.

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“…At 6.7 GPa, the deep-to-shallow transition of acceptor levels [20][21][22] leads to the first discontinuous variation of resistivity. The second discontinuity at 9.5 GPa is related to the transition from zinc blende to cinnabar phase [6][7][8][9][10][11][12][13][14][15].…”

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confidence: 98%

The electrical properties of ZnTe under high pressure and moderate temperature

Cui

Yang

et al. 2011

Phys. Status Solidi C

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The resistivity of ZnTe powders has been measured under high pressure up to 29 GPa and temperature ranged from 303.0 to 403.0 K by using a diamond anvil cell. The resistivity changed discontinuously at 9.5 and 13.1 GPa, corresponding to the phase transitions from zinc blende to cinnabar and then to Cmcm structure. The decrease of activation energy by one order of magnitude indicates the deep‐to‐shallow transition of acceptor levels at 6.7 GPa. The resistivity decreases with temperature increasing indicates the semiconducting character of ZnTe in zinc blende phase. The resistivity of ZnTe in cinnabar phase decreases slightly with temperature increasing, indicating that this phase is a narrow‐gap semiconductor. After 19.1 GPa, the resistivity increases with temperature increasing, indicating the metallic character of Cmcm phase. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In addition to these high energy transitions, a typical room temperature mid-infrared absorption spectrum of CdSe : Cr ++ reveals a peak at 1.9 mm [5] corresponding to the intercenter transition 5 T 2 ! 5 E of Cr ++ in CdSe [6].…”

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Development of AIIBVI Semiconductors Doped with Cr for IR Laser Application

Kasiyan

Shneck

Dashevsky

et al. 2002

phys. stat. sol. (b)

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Electrical and optical measurements obtained with CdSe single crystals doped with chromium from a gas source CrSe over a wide temperature range (500-1050 °C) are compared with ZnSe annealed in liquid metal (Zn). These processes are intended to control the concentrations of the impurity and intrinsic defects. The low temperature annealing of CdSe crystals in CrSe atmosphere allows obtaining high electron mobility up to 9000 cm 2 /Vs at 80 K and demonstrates the low native defect concentration. A high temperature annealing gives rise to increased electron concentration with decreased mobility. Optical absorption measurements show that at the high annealing temperature effective doping with Cr takes place. The impurity absorption beyond the absorption edge is interpreted by the excitation of Cr ÷+ and Cr+ deep levels.

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Luminescence of deep phosphorous and arsenic impurities in ZnSe at high pressure

Cited by 30 publications

References 27 publications

Effects of Pressure on the Zn Vacancy in ZnSe: Essential Role of Lattice Relaxation for a BasicC3vDefect

Effects of Pressure on the Zn Vacancy in ZnSe: Essential Role of Lattice Relaxation for a BasicC3vDefect

The electrical properties of ZnTe under high pressure and moderate temperature

Development of AIIBVI Semiconductors Doped with Cr for IR Laser Application

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