A pressure induced semiconductor-semimetal phase transition on tungsten diselenide has been studied using in situ electrical resistivity measurement and first-principles calculation under high pressure. The experimental results indicate that the phase transition takes place at 38.1 GPa. The first-principles calculations performed by CASTEP code based on the density functional theory illustrate that the indirect band gap of WSe 2 vanishes at 35 GPa, which results in an isostructural phase transition from semiconductor to semimetal in WSe 2 . According to the pressure dependence of partial density of states, the semimetallic character of WSe 2 is mainly caused by W-Se covalent bonding rather than van der Waals bonding.

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The improvement of ferromagnetic properties is critical for the practical application of multiferroic materials, to be exact, BiFeO3 (BFO). Herein, we have investigated the evolution in the structure and morphology of Ho or/and Mn-doped thin films and the related diversification in ferromagnetic behavior. BFO, Bi0.95Ho0.05FeO3 (BHFO), BiFe0.95Mn0.05O3 (BFMO) and Bi0.95Ho0.05Fe0.95Mn0.05O3 (BHFMO) thin films are synthesized via the conventional sol-gel method. Density, size and phase structure are crucial to optimize the ferromagnetic properties. Specifically, under the applied magnetic field of 10 kOe, BHFO and BFMO thin films can produce obvious magnetic properties during magnetization and, additionally, doping with Ho and Mn (BHFMO) can achieve better magnetic properties. This enhancement is attributed to the lattice distortions caused by the ionic sizes difference between the doping agent and the host, the generation of the new exchange interactions and the inhibition of the antiferromagnetic spiral modulated spin structure. This study provides key insights of understanding the tunable ferromagnetic properties of co-doped BFO.

Carrier behavior of CaB 6 powders was investigated by using in situ Hall effect measurement under high pressure and resistivity property was detected under low temperature with microcircuit fabricated on diamond anvil cell. Carrier behavior was analyzed by carrier concentration and Hall coefficient. The variation of defects in the grain boundary region lead the carrier concentration and the Hall coefficient in the decompression process are much lower than that in the compression process. The resistivity depended temperature at various pressures indicated that CaB 6 has a typical metallic behavior under high pressure.

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