Luminescence of zinc and aluminum doped gallium phosphide

Demidov, D. M.; Zykov, Anton; Samorukov, B. E.

doi:10.1007/bf00894707

Cited by 2 publications

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such results suggest that oxygen is gettered out of the substrate while soaking in the phosphorus-saturated gallium-aluminum melt. These results are comparable to those found by Demidov et al 13 on the growth of bulk zinc-doped GaP crystals from a gallium melt with and without aluminum. More evident verification of improved substrate quality after gettering is demonstrated by the presence of a free exciton peak at 2.30 eV in GaP only observed after the gettering process (P4 in Fig.…”

Section: Recombination (P1) Isoelectronic Nearest-neighborsupporting

confidence: 94%

“…[9][10][11][12][13] Additional peaks at 2.16 eV and 2.11 eV are longitudinal optical (LO) phonon replicas of the P1 peak, specifically (Zn-S)-1LO and (Zn-S)-2LO, respectively. 14 While both the as-received and gettered samples demonstrate all P1, P2, and P3 emission peaks, the ratios of the peak intensities are quite different.…”

Section: Recombination (P1) Isoelectronic Nearest-neighbormentioning

confidence: 99%

See 1 more Smart Citation

Gettered GaP Substrates for Improved Multijunction Solar Cell Devices

Montgomery

Allen

Wildeson

et al. 2011

Journal of Elec Materi

View full text Add to dashboard Cite

We report on the characterization of gettered p-type GaP substrates for application in high-efficiency multijunction solar cells. A commercial zinc-doped GaP substrate was divided, with one piece soaked in a phosphorussaturated gallium-aluminum melt at 975°C. Low-temperature continuouswave photoluminescence indicated a significant decrease in deep-level impurity peaks due to oxygen and zinc-oxygen complexes after gettering in the phosphorus-saturated gallium-aluminum melt. To illustrate what effect this has on minority-carrier diffusion lengths, Au/GaP Schottky solar cells were fabricated on the substrates, and the spectral response of each was examined. A marked increase in response across all wavelengths on the gettered sample indicates an increase in minority-carrier diffusion lengths. To ensure these results were not simply due to an increase in the depletion region width resulting from a change in carrier density, C-V profiling was performed and found only a small change in carrier concentration of the gettered sample.

show abstract

Section: Recombination (P1) Isoelectronic Nearest-neighborsupporting

confidence: 94%

Section: Recombination (P1) Isoelectronic Nearest-neighbormentioning

confidence: 99%

Gettered GaP Substrates for Improved Multijunction Solar Cell Devices

Montgomery

Allen

Wildeson

et al. 2011

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…Impurities generating deep energy levels in semiconductors have been used to obtain semi-insulating materials, but they can also act as undesired optical recombination centers. Impurity-related deep levels may negatively affect materials’ properties, such as the case of diminished carrier mobility observed for gold in silicon, or generate optical emissions, reducing band-to-band transitions, such as the yellow band reported for Ga vacancies in GaN. , In organometallic-based vapor-phase growth systems, carbon originating from the pyrolysis of the precursors is expected to be the main contaminant. , However, other different residual impurities may also be incorporated, usually associated with the purity levels of the organometallic source. − In zinc-blend (ZB) GaP films, many chemical impurities are optically active. − Among them, nitrogen is one of the most interesting . This impurity acts as an isoelectronic trap in ZB GaP, leading to green emission at room temperature .…”

Section: Introductionmentioning

confidence: 99%

“…A traditional and noninvasive technique to study impurities in semiconductor materials is photoluminescence (PL). Despite its limited spatial resolution, PL was extensively exploited in the early years of semiconductor research, especially for GaP. − PL measurements provide a means for a quick evaluation of material quality since luminescence in general is very sensitive to small concentrations of foreign atoms or point defects.…”

Section: Introductionmentioning

confidence: 99%

Wurtzite Gallium Phosphide via Chemical Beam Epitaxy: Impurity-Related Luminescence vs Growth Conditions

et al. 2022

View full text Add to dashboard Cite

The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new structure with little available information about its emission properties compared to the most stable zinc-blend phase. Here, the effect of growth conditions of WZ GaP nano-and microstructures obtained via chemical beam epitaxy on the optical properties was studied using power-and temperature-dependent photoluminescence (PL). We showed that the PL spectra are dominated by two strong broad emission bands at 1.68 and 1.88 eV and two relatively narrow peaks at 2.04 and 2.09 eV. The broad emissions are associated with the presence of carbon and a small number of extended crystal defects, respectively. For the sharp emissions, two main radiative recombination channels were observed with ionization energies estimated in the range of 50−80 meV and lower than 10 meV. No variation of the low-temperature PL spectra was observed for samples grown at different P precursor flows, while increasing Ga content enhanced the dominant broad emission at around 1.68 eV, suggesting that the group III organometallic precursor is the main source of impurities. Finally, Be-doped samples were grown, and their characteristic optical emission at 2.03 eV was identified. These results contribute to the understanding of impurity-related luminescence in hexagonal GaP, being useful for further crystal growth optimization required for the fabrication of optoelectronic devices.

show abstract

Luminescence of zinc and aluminum doped gallium phosphide

Cited by 2 publications

References 2 publications

Gettered GaP Substrates for Improved Multijunction Solar Cell Devices

Gettered GaP Substrates for Improved Multijunction Solar Cell Devices

Wurtzite Gallium Phosphide via Chemical Beam Epitaxy: Impurity-Related Luminescence vs Growth Conditions

Contact Info

Product

Resources

About