Luminescence polarization of ordered GaInP/InP islands

Håkanson, Ulf; Zwiller, Valéry; Johansson, Mikael; Sass, T; Samuelson, Lars

doi:10.1063/1.1539544

Cited by 10 publications

(12 citation statements)

References 18 publications

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“…Notably, domains of ordered GaInP are formed during the overgrowth, having a double periodicity in the ͓1 11͔ and ͓11 1͔ directions. 23 The QD-induced ordering for this particular material system has recently been discussed in detail in Refs. 16 and 23. There is a rather complex interplay between the QD-QD distance and the growth of GaInP.…”

Section: Resultsmentioning

confidence: 99%

Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots

et al. 2003

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We have studied the early stages of GaInP overgrowth on InP quantum dots ͑QD's͒ experimentally and theoretically. A direct correlation between the surface morphology and the optical properties of individual InP QD's is made using scanning tunneling microscopy ͑STM͒ and scanning tunneling luminescence. The geometric structure of the islands is further investigated using cross-sectional transmission electron microscopy ͑TEM͒. The overgrowth occurs in three stages; initially the InP QD's act as seeding points for the overgrowth, where the GaInP grows laterally from the side facets of the QD. The growth occurs preferentially in the ͓110͔ direction and elongated GaInP/InP islands are formed. As the overgrowth continues the islands increase laterally in size and GaInP also starts to grow between the islands, but not covering the top of the InP QD's. The growth of GaInP on top of the QD's commences once the islands have begun to coalesce. Using a model based on the STM and TEM results the electronic structures of the QD's have been calculated by eight-band k•p theory. The calculations are in good agreement with the experimental results. Our findings unravel the details of the strain induced energy shift of the QD luminescence previously reported ͓Pistol et al., Appl. Phys. Lett. 67, 1438 ͑1995͔͒.

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Section: Resultsmentioning

confidence: 99%

Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots

et al. 2003

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“…We have previously shown that the observed undulations have a larger horizontal lattice spacing in the ͓110͔ direction. [15][16][17] The degree of polarization for the QDs on the undulations ͑66%͒ is, however, higher than the 36%-45% for QDs without undulations. 9 This strain anisotropy can also directly cause an anisotropy in the polarization of the optical emission, independent of the structural morphology.…”

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confidence: 92%

“…The degrees of polarization are 46% for the InGaP buffer layer and 66% for the InP QDs, both from sample A. 15 If one of these properties is weak in the structure then the anisotropy is more pronounced in the opposite direction. 2͑a͒ and reflecting the influence the undulations have on the ͑-PL͒ polarization orientation.…”

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confidence: 98%

Highly polarized self-assembled chains of single layer InP/(In,Ga)P quantum dots

Ugur¹,

Hatami²,

Vamivakas³

et al. 2010

Applied Physics Letters

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“…The tacit assumption throughout the vast majority of the international "quantum dot community" is that Stranski-Krastanow grown random alloy QDs are structurally stable. Recent experimental observations, however, seem to indicate that this is at least for several III-V, II-VI, and IV-VI compound semiconductor systems not the case [5][6][7][8][9][10][11][12]. In these systems it appears that it is atomically ordered or phase separated QDs that are structurally stable, i.e.…”

Section: Introductionmentioning

confidence: 99%

Atomic Ordering in Self-assembled Epitaxial and Endotaxial Compound and Element Semiconductor Quantum Dot Structures: The First Review

Möck

2003

MRS Proc.

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Although the main international research thrust on self-assembled epitaxial semiconductor quantum dots is currently being directed towards random alloy quantum dots, the suggestion is made that atomically ordered quantum dots which are grown by either epitaxy or endotaxy may in addition to their larger quantum confinement potentials possess superior long term structural stability. Such atomically ordered quantum dots should, therefore, be superior to random alloy quantum dots as far as prospective device applications are concerned. The basis for this suggestion is simple thermodynamic considerations. These considerations seem to explain our transmission electron microscopical observations of epitaxially grown atomically ordered In(Sb,As), (In,Ga)Sb, (Cd,Zn)Se, (Cd,Mn,Zn)Se quantum dots and Pb(Se,Te) quantum dot predecessor islands. Atomic ordering in (In,Ga)P quantum dot structures, as recently observed by other authors, does not seem to contradict our thermodynamic considerations. Endotaxially grown atomically ordered (In,Si,As) and (Sn,Si) quantum dots in Si matrices are briefly discussed as an even more unconventional approach to nanostructures with applications in electronics, photonics, information storage, and sensing.

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Luminescence polarization of ordered GaInP/InP islands

Abstract: Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

Cited by 10 publications

References 18 publications

Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots

Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots

Highly polarized self-assembled chains of single layer InP/(In,Ga)P quantum dots

Atomic Ordering in Self-assembled Epitaxial and Endotaxial Compound and Element Semiconductor Quantum Dot Structures: The First Review

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