Luminescence properties and mechanisms of optical transitions in digital-alloy InGaAlAs

Cho, Il-Wook; Ryu, Mee‐Yi; Song, Jin Dong

doi:10.1016/j.tsf.2017.06.035

Cited by 1 publication

(2 citation statements)

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“…On the other hand, the decay time τ 2 for all samples are pretty similar as shown in Table 1. In previous emission-photon energy-dependent decay times and excitation-power-dependent PL studies, the τ 1 and τ 2 are related to the exciton transition and donor-acceptor pair transition, respectively [10].…”

Section: Resultsmentioning

confidence: 99%

“…Defects such as alloy disorder due to an intermixing of Ga and Al atoms at the interfaces between InGaAs well and InAlAs barrier can be created in the digital-alloy InGaAlAs grown with (In 0.53 Ga 0.47 As) 1-z / (In 0.52 Al 0.48 As) z short-period superlattices (SPSs) [8,9]. In order to reduce defects, which act as non-radiative recombination centers, many efforts such as rapid thermal annealing process and adjusting the thickness of InGaAs well and/or InAlAs barrier have been proposed [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Temperature-dependent Luminescence Properties of Digital-alloy In(Ga_1−zAl_z)As

Cho

Ryu

Song

2018

Appl. Sci. Converg. Technol.

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The optical properties of the digital-alloy (In 0.53 Ga 0.47 As) 1-z /(In 0.52 Al 0.48 As) z grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy In(Ga 1-z Al z)As is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy In(Ga 1-z Al z)As because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy (InGaAs) 1-z /(InAlAs) z can be controlled by adjusting composition z.

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Section: Resultsmentioning

confidence: 99%