Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

Misiuk, A.; Sgorbini, Barbara; Rebohle, L.; Jun, J.; Antonova, I. V.; Tyschenko, I. E.; Romano‐Rodríguez, A.; López, M.

doi:10.1002/(sici)1521-3951(199901)211:1<233::aid-pssb233>3.0.co;2-b

Cited by 13 publications

(4 citation statements)

References 4 publications

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“…In silicon-rich silicon nitride, the temperature can be lower. Phase separation reaction may take place at even lower temperatures if the annealing is conducted at a high-pressure chamber [13,15]. Figure 2 shows a typical TEM picture for SiO 2 film with embedded Si-NCs.…”

Section: Growth Of Dielectric-embedded Si Nanocrystallitessupporting

confidence: 77%

Growth of dielectric-embedded silicon nanocrystallites for silicon integrated photonics

Wong

2010

2010 27th International Conference on Microelectronics Proceedings

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Silicon integrated photonics has attracted much attentions recently because of the available of silicon-based quantum devices and optical components. Dielectric films with embedded silicon nanocrystallites (Si-NCs) have been recognized as one of the promising light-emitting materials for this purpose. This work reviews some attempts reported recently for preparing dielectric-embedded Si-NCs based on the conventional CMOS processes. The mechanism for the Si-NCs formation is discussed. The material and light emitting properties of the as-prepared Si-NC embedded in dielectric films are studied in detail.

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Section: Growth Of Dielectric-embedded Si Nanocrystallitessupporting

confidence: 77%

Growth of dielectric-embedded silicon nanocrystallites for silicon integrated photonics

Wong

2010

2010 27th International Conference on Microelectronics Proceedings

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“…On the other hand, it has been stated that specific numerous cluster-like defects are created in Cz-Si subjected to the HP-HT treatment at 1120±1400 K [3,8]. Such specific oxygen related defects remained to be distributed in pSi after anodization and could be responsible for quenching of pSi PL (compare [9]).…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

Misiuk

Surma

Bąk‐Misiuk

et al. 2000

phys. stat. sol. (a)

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Photoluminescence (PL) of porous silicon (pSi) prepared from Czochralski silicon (Cz-Si) annealed up to 1620 K at enhanced pressure of argon up to 1 GPa (HP-HT treatment) was investigated. The intensity of PL with maximum at 680±720 nm decreases with the pressure for pSi prepared from the substrates treated at 1400 K, and increases with the pressure for pSi prepared from the substrates treated at 1620 K. The pSi films prepared from the HP-HT treated substrates were relaxed, contrary to those on the substrates annealed at 1620 K for 30 min at 10 5 Pa. Although our results revealed that photoluminescence properties of pSi depend significantly on the presence of defects created during the oxygen precipitation process, the role of other defects such as non-radiative recombination centres and metallic contamination should be still under consideration.

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“…Our results are "hot": they are the first obtained on the title subject. This paper contains mostly new results (only some of them were already published [5,6,8]). In spite of performed investigations, many problems need further investigation and many questions remain to be answered.…”

Section: Discussionmentioning

confidence: 99%

Photoluminescence from Pressure — Annealed Nanostructured Silicon Dioxide and Nitride Films

Misiuk

Rebohle

Iller³

et al. 2000

Nanostructured Films and Coatings

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Light emission in thin films (SiO 2 , Si0 2 :Si and Si 3 N 4 ) on a single crystalline silicon surface has been investigated after treatment at enhanced argon pressure, HP. Pronounced effect of HP up to 1.5 GPa during annealing up to 1550 K on photoluminescence, PL, of the SiO 2 , SiO2:Si and Si 3 N 4 films of 0.1 -1.2 jim thickness has been stated. The pressure -temperature treatment results in development and enhancement of ultraviolet and visible PL at about 290 -320, 360, 460, 600 and 680 nm, related to stress induced creation of PL active silicon nanoclusters and other oxygen deficient defects.

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Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

Cited by 13 publications

References 4 publications

Growth of dielectric-embedded silicon nanocrystallites for silicon integrated photonics

Growth of dielectric-embedded silicon nanocrystallites for silicon integrated photonics

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

Photoluminescence from Pressure — Annealed Nanostructured Silicon Dioxide and Nitride Films

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