Luminescence properties of ultrasmall amorphous Si nanoparticles with sizes smaller than 2nm

Photoluminescent 1–2 nm Sized Silicon Nanoparticles: A Surface-Dependent System

“…Since no evidence on the formation of SiN environments was obtained from XPS and FTIR data of BUSiNPs, tetraoctylammonium bromide chemisorption to the particle surface is of no significance under our synthesis conditions. In fact, the PL of species e and f is coincident to that reported for 1.5 nm-size amorphous SiNPs obtained from the electrochemical etching of amorphous Si films . The excitation–emission matrix of propylamine-surface derivatized BUSiNPs shows the contribution of two emitting species ( g and h in Figure C,D) with similar PL and PLE spectra to those of species e and f .…”

Improving field emission properties of GaN nanowires by oxide coating

“…[4][5][6][7][8][9][10] Electron emission from nanowire-structured gallium nitride ͑GaN͒ field emitter has been under investigation and it was found that the GaN nanowires are intrinsically n-type semiconductor with a larger electron density compared to bulk GaN. [11][12][13][14][15] GaN is believed to be an excellent field emitter because it possess a low electron affinity of 2.7-3.3 eV, which renders the wonderful possibility for GaN to form a lower emission potential barrier in a heterojunction structure. In addition, GaN also possess excellent properties such as chemical inertness and high mechanical hardness.…”

Effects of dispersion solvent on the formation of silicon nanoparticles synthesized via microemulsion route

“…For these types of structures, it is difficult to measure the particles' size and size distribution of SiNPs. Figure 3 is a TEM image of typical SiNPs (suspended in ethanol) which was obtained with Philips CM12 instrument by dropping the ethanol suspension on the holey carbon-coated copper grid [13]. From the TEM image, it showed the spherical and smooth surface of SiNPs.…”