Luminescent and nonlinear spectroscopy of recombination centers in isovalent doped ZnSe: Te crystals

Baltramiejūnas, R.; Ryzhikov, V. D.; Gavryushin, V.; Kazlauskas, A.; Račiukaitis, Gediminas; Silin, V.I.; Juodžbalis, D.; Stepankevičius, V.

doi:10.1016/0022-2313(92)90234-z

Cited by 38 publications

(14 citation statements)

References 11 publications

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“…This is of donor-acceptor recombination nature and is fixed to DA associate ( Zn V − +D + )º as acceptor, with the components in the nearest points in a unit cell. The PL peak at 574 nm with 2.16 eV is the same as the 2.18 eV peak assigned as Ga-G by Baltraniejunas [17]. All the other Te content (x = 0.4, 0.6, 0.8) shows the similar behavior of PL spectra for the ZnSe 1-x Te x films.…”

Section: Resultsmentioning

confidence: 54%

Photoluminescence properties of ZnSe1−x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique

Suthagar

Kissinger

Balasubramaniam³

et al. 2010

Sci. China Technol. Sci.

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Zinc chalcogenide which includes zinc selenide, zinc sulphide, zinc telluride and mixed crystals of these shows a great potential as an optoelectronic device material. Zinc selenotelluride is a suitable material for visible light emitting devices which are expected to cover the spectral range from yellow to blue. In our present study the composition controlled ZnSe 1-x Te x films with different Te content x = 0, 0.2, 0.4, 0.6, 0.8 and 1.0 were deposited by electron beam (EB) evaporation technique. GaAs films were deposited by vacuum evaporation route on indium tin oxide (ITO) substrates which were used as base for depositing the ZnSe 1-x Te x film. The band-gap energy change in the entire composition range was determined at room temperature by photoluminescence (PL) spectroscopy. The peak observed at about 2.56 eV shows the effect of solid solution formation between ZnSe and ZnTe which modifies the lattice and consequently the band edge emission characteristics. The heterostructures showed three peaks in the visible region of white light spectrum. semiconducting II-VI materials, ZnSeTe, electron beam evaporation, photoluminescence Citation: Suthagar J, Suthan kissinger N J, Balasubramaniam M, et al. Photoluminescence properties of ZnSe 1-x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique.

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Section: Resultsmentioning

confidence: 54%

Photoluminescence properties of ZnSe1−x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique

Suthagar

Kissinger

Balasubramaniam³

et al. 2010

Sci. China Technol. Sci.

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“…Материалом загрузки являлся CVD-ZnSe c содержанием 99.9996 wt.% ZnSe, что, как показал анализ методом масс-спектрометрии с индуктивно-связанной плазмой [8] Видно, что в кристалле есть дефекты неясной природы, но люминесцентные характеристики вне этих дефектов более-менее однородны и состоят из экситонной линии люминесценции с длиной волны 473 nm, широкой полосы с максимумом в районе 580 nm и особенностями в спектре (возможно, в результате наложения двух линий) в районе 630 nm. Эта линия похожа на линии, которые в работах [10,11] связывались с люминесценцией теллура. В дальнейшем будем также ассоциировать эту линию с теллуром.…”

Section: методика эксперимента и полученные результатыunclassified

Влияние отжига в газообразном цинке на люминесценцию в видимом и среднем ИК диапазонах ZnSe : Fe-=SUP=-2+-=/SUP=-

Боряков¹,

Гладилин²,

Ильичёв³

et al. 2020

Журнал Технической Физики

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The study results of the effect of annealing in a zinc vapor atmosphere on the defect and impurity composition of iron diffusion-doped ZnSe:Te plates on the characteristics of cathodoluminescence (CL) in the IR range are described. The formation of precipitates at the boundaries of twin faults was found. It is shown that in structures with a surface iron concentration of more than 1 at%, a significant increase in the CL intensity in the IR range is observed as a result of annealing in a zinc vapor atmosphere. A partial recovery of interband luminescence in regions with a high iron concentration as a result of annealing was found.

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“…Moreover, the emission spectrum (band is peaked at ∼600 nm) is convenient for detection by highsensitivity photodiodes. Emission efficiency of this material can be improved by doping [5][6][7][8][9] and aftergrowth annealing [6,[10][11][12]. Appropriate doping and thermal treatment enhance formation of stabile centres of efficient radiative emission.…”

Section: Introductionmentioning

confidence: 99%

“…Appropriate doping and thermal treatment enhance formation of stabile centres of efficient radiative emission. Isoelectronic doping with tellurium has been shown to substantially enhance the emission [6,7]. Meanwhile, the influence of other isoelectronic impurities attracted still much less attention.…”

Section: Introductionmentioning

confidence: 99%

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Luminescence study of ZnSe based scintillators in frequency domain

Vitta¹

2008

Lithuanian J. Phys.

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Photoluminescence of ZnSe-based scintillation crystals is studied. Photoluminescence intensities and spectra of isoelectronically doped ZnSe(Te), ZnSe(O), and ZnSe(O,Al) are compared. Frequency domain luminescence lifetime measurement technique was applied to study carrier dynamics at low density of nonequilibrium carriers, which is typical for operation of high-sensitivity ZnSe-based radiation detectors. Temperature-dependent competition between donor-acceptor-pair-type and exponential luminescence decay components was observed.

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Luminescent and nonlinear spectroscopy of recombination centers in isovalent doped ZnSe: Te crystals

Cited by 38 publications

References 11 publications

Photoluminescence properties of ZnSe1−x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique

Photoluminescence properties of ZnSe1−x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique

Влияние отжига в газообразном цинке на люминесценцию в видимом и среднем ИК диапазонах ZnSe : Fe-=SUP=-2+-=/SUP=-

Luminescence study of ZnSe based scintillators in frequency domain

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