Luminescent centers in doped crystals of CsMgI3: Energy storage and thermoluminescence

McPherson, Gary L.; Talluto, Katherine F.

doi:10.1016/0038-1098(82)90488-4

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…In the cases of CsMgBr 3 and CsMgI 3 , strong absorption bands are detected at high energies, which are readily recognized as transition from the valence to the conduction band and allow a determination of the optical band gaps as given in Table 1. In particular, our experimentally determined value for the band gap of CsMgI 3 (4.57 eV) is in very good agreement with an earlier measurement by McPherson and Talluto (4.84 eV) [81]. In the case of CsMgCl 3 , the band-band transition is energetically above the measurable range of the reflectance spectrometer.…”

Section: Band Structure and Electronic Density Of States (Dos) Calculationssupporting

confidence: 91%

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Nature of Localized Excitons in CsMgX3 ( X=Cl , Br, I) and Their Interactions with
Suta
¹
,
Lavoie-Cardinal
²
,
Olchowka
³

et al. 2018
Phys. Rev. Applied

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In this paper, the luminescence properties of self-trapped excitons (STEs) of undoped and Eu 2+ doped perovskite-type materials CsMgX3 (X = Cl, Br, I) are presented. The three compounds crystallize isostructurally in a hexagonal crystal system that exhibits an intrinsic pseudo one-dimensionality. This feature has a highly stabilizing effect upon the localization of excitons. Similarities to the properties of STEs in alkali halides are drawn that are justified by band structure and density of states (DOS) calculations.The luminescence spectra of all three halides are characterized and interpreted despite of their high complexity with many emissive transitions. It is illustrated that both self-trapped excitons (STEs) and impurity-localized self-trapped excitons (IL-STEs) are responsible for the features in the spectra . The impurity localization of the STEs is proven by doping the hosts with Sr 2+ ions instead of Eu 2+ ions. The decay times in the µs range indicate that emission predominantly occurs from a triplet state of the STEs with a prominent afterglow component for the IL-STEs that ideally suits a trapping model along the one-dimensional chains of the halides. Moreover, by thermal activation, the excitons tend to annihilate at the Eu 2+ traps thereby inducing an energy transfer to the Eu 2+ ions. Due to this action, an extreme increase of the intensity of the Eu 2+ -based 4f 6 5d-4f 7 emission at room temperature could be observed, which might be a general explanation for unusual temperature-dependent emission intensities of Eu 2+ ions. In general, an understanding of the basic optical properties of the STEs may give some new insights into the mechanism of currently used X-ray storage phosphors as well as scintillators.

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Section: Band Structure and Electronic Density Of States (Dos) Calculationssupporting

confidence: 91%

“…(392 nm) in perfect agreement to the reported value for the intrinsic emission in this iodide [81]. According to the decay times (see section 3.3), they are also assigned to π transitions.…”

Section: Band Structure and Electronic Density Of States (Dos) Calculationssupporting

confidence: 89%

Nature of Localized Excitons in CsMgX3 ( X=Cl , Br, I) and Their Interactions with
Suta
¹
,
Lavoie-Cardinal
²
,
Olchowka
³

et al. 2018
Phys. Rev. Applied

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show abstract

“…Other studies of the TL of single crystals of (Te) doped with (Al or Ga) and (Cd, Zn, Se) impurities are compared with TL of single crystals which were not doped [7]- [9]. Also, thermoluminescent emission by incorporated phosphor atoms is studied in the case of a single type of electron traps and recombination levels [10] [11].…”

Section: Introductionmentioning

confidence: 99%

“…The introduction of trivalent impurities (Se 3+ , In 3+ , Ce 3+ , Gd 3+ , Ho 3+ , Er 3+ , and Tm 3+ ) results in luminescent centers which are excited by irradiation at energies slightly below the band gap. It is found when these doped crystals are irradiated at low temperatures, they store energy and show pronounced TL [10].…”

Section: Introductionmentioning

confidence: 99%

Developing Suitable Sensitive Compound Semiconductor Materials Doped by Transition Metals for Occupational Thermoluminescence Dosimetry

Kamal¹

2016

AMPC

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The essential objective of radiation dosimetry is to develop suitable sensitive materials for different measurements in radiation fields. Our exploration is to find potentially suitable high gamma radiation dosimeters in the range from 0.5E4 to 1.5E4 Gy. Gamma rays source (60 Co, 136 Gy/min) has been used. Many compound semiconductor materials were prepared and investigated. Thermoluminescence (TL) glow curve was analyzed into its component by analytical segregation program using computerized glow curve deconvolution (CGCD). Three zero dose readings for non-irradiated powders of the materials have been taken as lower limit of detection. The results indicated that some of the tested materials have exhibited TL linearly with respect to dose. In addition, dose response of these materials was found to be useful for high radiation dosimetry. Glow curve structures exhibited several peaks corresponding to the various energies of the emptied traps. Variation in the standard deviation for reusability cycles has been notived after ten readout. The fading at ambient temperature was studied up to 60 days which reached a relative stability (~1.5% for all), 10 days after irradiation. A typical glow curve of CoPa which irradiated with 1.5E4 Gy was analyzed. Characterizations of tested materials indicated that crystals of ZnLa:Li, ZnLa:Cd, and ZnLa:Cr have stable and increasing thermoluminescent responses with high gamma radiation dose range. Special glow peaks can be used as estimators for absorbed doses as well as re-estimation for time elapsed exposures.

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Upconversion fluorescence spectroscopy of Er3+ pairs in CsCdBr3 a

Cockroft

Jones

Syme

1989

Journal of Luminescence

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Luminescent centers in doped crystals of CsMgI3: Energy storage and thermoluminescence

Cited by 6 publications

References 17 publications

Nature of Localized Excitons in CsMgX3 ( X=Cl , Br, I) and Their Interactions with
Suta
¹
,
Lavoie-Cardinal
²
,
Olchowka
³

et al. 2018
Phys. Rev. Applied

Nature of Localized Excitons in CsMgX3 ( X=Cl , Br, I) and Their Interactions with
Suta
¹
,
Lavoie-Cardinal
²
,
Olchowka
³

et al. 2018
Phys. Rev. Applied

Developing Suitable Sensitive Compound Semiconductor Materials Doped by Transition Metals for Occupational Thermoluminescence Dosimetry

Upconversion fluorescence spectroscopy of Er3+ pairs in CsCdBr3 a

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Luminescent centers in doped crystals of CsMgI3: Energy storage and thermoluminescence

Cited by 6 publications

References 17 publications

Nature of Localized Excitons in CsMgX3 ( X=Cl , Br, I) and Their Interactions with Suta1, Lavoie-Cardinal2, Olchowka3 et al. 2018Phys. Rev. Applied

Nature of Localized Excitons in CsMgX3 ( X=Cl , Br, I) and Their Interactions with Suta1, Lavoie-Cardinal2, Olchowka3 et al. 2018Phys. Rev. Applied

Developing Suitable Sensitive Compound Semiconductor Materials Doped by Transition Metals for Occupational Thermoluminescence Dosimetry

Upconversion fluorescence spectroscopy of Er3+ pairs in CsCdBr3 a

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Nature of Localized Excitons in CsMgX3 ( X=Cl , Br, I) and Their Interactions with
Suta
¹
,
Lavoie-Cardinal
²
,
Olchowka
³

et al. 2018
Phys. Rev. Applied

Nature of Localized Excitons in CsMgX3 ( X=Cl , Br, I) and Their Interactions with
Suta
¹
,
Lavoie-Cardinal
²
,
Olchowka
³

et al. 2018
Phys. Rev. Applied