2014
DOI: 10.1088/0022-3727/47/38/385103
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Luminescent porous silicon prepared by reactive ion etching

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Cited by 13 publications
(9 citation statements)
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“…Q total = Q Excess Carrier + Q sub + Q por (5) Q total characterises the value of all charge carriers involved in the electrooxidation of ethanol. It the case of the present research work, Q total depends on Pd/por-Si contact area.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Q total = Q Excess Carrier + Q sub + Q por (5) Q total characterises the value of all charge carriers involved in the electrooxidation of ethanol. It the case of the present research work, Q total depends on Pd/por-Si contact area.…”
Section: Discussionmentioning
confidence: 99%
“…The plasma chemical etching for porous silicon formation is widely used. This method is characterised by a high complexity of hardware provided [5]. Chemical etching in solutions of alkalis or acids is a cheaper method for porous Si formation.…”
Section: Introductionmentioning
confidence: 99%
“…Chemically stable mesoporous and macroporous silicon structures can be formed as a result of a maskless sequential reactive-ion etching (RIE) of silicon wafers using H 2 , O 2 , and SF 6 plasma [36]. The sequential process is composed of one etching and two passivation subsequences: oxidation and fluorination, as depicted in Figure 11.…”
Section: Reactive-ion Etchingmentioning
confidence: 99%
“…By proper adjustment of the gases flow rates, plasma powers, durations of the subsequences, and repetition, it is possible to tailor the porosity and thickness of the mesoporous or macroporous material [36]. Since the fabrication process is performed at room temperature, it can be used as a post-fabrication treatment, which is very important in a technological point of view.…”
Section: Reactive-ion Etchingmentioning
confidence: 99%
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