Luminescent Properties of a Surface‐Modified Cadmium Selenide Electrode

Ryswyk, Hal Van

doi:10.1149/1.2113740

J. Electrochem. Soc.

1985

DOI: 10.1149/1.2113740

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Luminescent Properties of a Surface‐Modified Cadmium Selenide Electrode

Hal Van Ryswyk

Abstract: not Available.

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“…With CdSe only partial stability was reported, as evidenced by the formation of surface precipitates (22)(23)(24) or by a reduction of current multiplication due to organic redox systems (25). These observations were confirmed by Auger electron spectroscopy (23). The surface layers were shown to bc of the Prussian blue type, using Fourier transformed infrared spectroscopy (F~rIR).…”

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“…In order to obtain better spectral matching to the solar spectrum, faster charge transfer to the solution and a higher band bending, {Fe(CN)~} 4 ':~-has been used as an alternative redox couple. With CdSe only partial stability was reported, as evidenced by the formation of surface precipitates (22)(23)(24) or by a reduction of current multiplication due to organic redox systems (25). With CdSe only partial stability was reported, as evidenced by the formation of surface precipitates (22)(23)(24) or by a reduction of current multiplication due to organic redox systems (25).…”

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Stability of CdSe and Se Layers in K 4 [ Fe ( CN ) 6 ] / K 3 [ Fe ( CN ) 6 ] Solutions

Marcu

Strehblow

1991

J. Electrochem. Soc.

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The photoelectrochemistry of CdSe and CdSe/Se has been examined by cyclic voltammetry in a 0.1M KC1 solution in the presence of various concentrations of K3[Fe(CN)sl and K4[Fe(CN)G]. The above mentioned redox species stabilize both Se and CdSe with regard to photo-oxidation and reduction. A stabilization efficiency, S, defined as the ratio of charge transfer current to the redox species vs. total current, is measured. For CdSc a value S = 0.6 is reported, while for Se reduction S = 0.3 (crcd = 10 2M). The potential at which the photocurrent appears (onset potential) changes with the direction of the voltage scan and the nature of the redox species present in the solution. These results may be useful for applications of CdSe/Se junctions for solar energy conversion.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.120.3 Downloaded on 2015-05-25 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.120.3 Downloaded on 2015-05-25 to IP

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confidence: 90%

mentioning

confidence: 99%

Stability of CdSe and Se Layers in K 4 [ Fe ( CN ) 6 ] / K 3 [ Fe ( CN ) 6 ] Solutions

Marcu

Strehblow

1991

J. Electrochem. Soc.

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On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

Schaeffer¹,

Gilmer²,

Samavedam³

et al. 2007

Journal of Applied Physics

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Factors responsible for the undesirably high values of positive-channel (p-channel) threshold voltage (Vt) in high-κ metal oxide semiconductor transistors are investigated. In silicon/silicon dioxide/hafnium dioxide/metal gate transistors an anomalous nonlinear relationship between the equivalent oxide thickness (EOT) and Vt occurs when the silicon dioxide (SiO2) interface layer is sufficiently thin (<2.3 nm). The deviation from the expected EOT versus Vt behavior is shown to be related to processing temperature, metal work-function, substrate doping type, and thickness of the high-κ material. This result, coupled with charge trapping measurements on samples with different SiO2 interface layer thickness, suggests that the loss of negative fixed charge via the tunneling of trapped electrons to the substrate is a possible explanation for the elevated p-channel Vt.

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Luminescent Properties of a Surface‐Modified Cadmium Selenide Electrode

Abstract: not Available.

Cited by 2 publications

References 4 publications

Stability of CdSe and Se Layers in K 4 [ Fe ( CN ) 6 ] / K 3 [ Fe ( CN ) 6 ] Solutions

Stability of CdSe and Se Layers in K 4 [ Fe ( CN ) 6 ] / K 3 [ Fe ( CN ) 6 ] Solutions

On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

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