Luminescent Tb3+ doped barium tungstate thin films as a potential candidate for photonic applications

Pradeep, S.; Sreedharan, R. Sreeja; Sagadevan, Suresh; Kavitha, V.; Pillai, Naresh; Pillai, V. P. Mahadevan

doi:10.1016/j.jlumin.2020.117484

Cited by 8 publications

(4 citation statements)

References 57 publications

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“…Moreover, it has been reported that Zn-bonded WO 4 nanostructures exhibit reverse saturable absorption under continuous-wave laser excitation [20]. Besides, rare earth element doped MoO 4 and WO 4 semiconductor materials attract attention in optoelectronic technology due to their effective luminescence properties [21][22][23][24]. Additionally, these two materials are also of interest because they show nonlinear optical responses to high light intensities [11,12,[25][26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Doğan,

Karatay,

Isik

et al. 2024

Phys. Scr.

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Nonlinear absorption properties of PbMo0.75W0.25O4 single crystal fabricated by the Czochralski method were studied. The band gap energy of the crystal was determined as 3.12 eV. Urbach energy which represents the defect states inside the band gap was found to be 0.106 eV. PbMo0.75W0.25O4 single crystal has a broad photoluminescence emission band between 376 and 700 nm, with the highest emission intensity occurring at 486 nm and the lowest intensity peak at 547 nm, depending on the defect states. Femtosecond transient absorption measurements reveal that the lifetime of localized defect states is found to be higher than the 4 ns pulse duration. Open aperture (OA) Z-scan results demonstrate that the PbMo0.75W0.25O4 crystal exhibits nonlinear absorption (NA) that includes simultaneous two-photon absorption (TPA) as the dominant mechanism at the 532 nm excitations corresponding to 2.32 eV energy. NA coefficient (βeff) increased from 7.24 x 10-10 m/W to 8.81 x 10-10 m/W with increasing pump intensity. At higher intensities βeff tends to decrease with intensity increase. This decrease is an indication that saturable absorption (SA) occurred along with the TPA, called saturation of TPA. The lifetime of the defect states was measured by femtosecond transient absorption spectroscopy. Saturable absorption behavior was observed due to the long lifetime of the localized defect states. Closed aperture (CA) Z-scan trace shows the sign of a nonlinear refractive index. The optical limiting threshold of PbMo0.75W0.25O4 single crystal at the lowest intensity was determined as 3.45 mJ/cm2. Results show that the PbMo0.75W0.25O4 single crystal can be a suitable semiconductor material for optical limiting applications in the visible region.

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Section: Introductionmentioning

confidence: 99%

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Doğan,

Karatay,

Isik

et al. 2024

Phys. Scr.

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“…Sundaresan et al fabricated barium tungstate via a facile ultrasound-assisted method . Pradeep et al fabricated Tb 3+ -doped barium tungstate thin films via pulsed laser deposition technique for photonic applications . However, no studies have been found on the electrochemical OER, and it has been reported for the first time.…”

Section: Introductionmentioning

confidence: 99%

“… 21 Pradeep et al fabricated Tb 3+ -doped barium tungstate thin films via pulsed laser deposition technique for photonic applications. 22 However, no studies have been found on the electrochemical OER, and it has been reported for the first time. In this work, pure and diverse doping concentrations (0.02, 0.04, and 0.06 M) of neodymium-doped barium tungstate nanostructures were successfully synthesized by using the simple co-precipitation process.…”

Section: Introductionmentioning

confidence: 99%

Neodymium-Doped Novel Barium Tungstate Nanospindles for the Enhanced Oxygen Evolution Reaction

et al. 2023

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In this work, pristine, 0.02, 0.04, and 0.06 M neodymium (Nd)-doped barium tungstate nanostructures were synthesized via a simple co-precipitation method for the water oxidation process. The obtained X-ray diffraction high-intensity peak at a 2θ value of 26.4°corresponding to the (112) lattice plane confirmed the formation of a tetragonal structure of BaWO 4 . Moreover, the BaWO 4 morphology was examined by scanning electron microscopy, which showed the existence of nanospindles. An energydispersive X-ray spectrum confirmed the subsistence of the produced materials, for example, barium (Ba), tungsten (W), oxide (O), and neodymium (Nd), with weight percentages of 28.58, 46.63, 16.64, and 8.16%, respectively. The 0.04 M Nd-doped BaWO 4 product was explored to attain a high surface area of 18.18 m 2 /g, a pore volume of 0.079 cm 3 /g, and a pore diameter of 2.215 nm. Compared to the other prepared electrodes, the 0.04 M Nd-doped BaWO 4 product exhibited low overpotential values of 330 mV and 450 mV to deliver current densities of 10 mA/cm 2 and 50 mA/ cm 2 , respectively. In addition, the optimized electrode achieved a small Tafel slope value of 158 mV dec −1 and followed the Volmer− Heyrovsky mechanism. Moreover, the electrical conductivity of BaWO 4 was tuned due to the addition of a rare-earth metal dopant, and it exhibited the charge-transfer resistance and solution resistance values of 0.98 and 1.01 Ω, respectively. The prepared electrocatalyst was further studied by using cyclic voltammetry, and it exhibited a high double-layer capacitance value of 29.3 mF/ cm 2 and high electrochemically active surface areas of 1.465 cm 2 . The electrochemical performance was greatly improved depending on the concentration of the doping agent, and it was well consistent with the obtained results. The best electrocatalyst was subjected to a chronoamperometry test, which exhibited excellent stability even after 20 h. Hence, this work suggests that alkaline metal tungstates have a cost-effective, efficient, and promising electrocatalyst, and it is a new approach for the water oxidation process.

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“…These materials have attracted the wide attention of researchers due to their high luminous efficiency, long life, low power consumption, good stability, and high reliability. For example, Pradeep et al [ 27 ] synthesized BaWO 4 thin films with different Tb 3+ doping concentrations in recent years. UV–visible spectroscopy analysis showed that with the increase in Tb 3+ doping concentration, the thickness of the film decreased and the average transmittance increased.…”

Section: Introductionmentioning

confidence: 99%

Synthesis Methods and Applications of Semiconductor Material ZnWO₄ with Multifunctions and Multiconstructions

Wang

et al. 2021

Energy Tech

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At present, nanostructures with excellent morphology have become a research hotspot. With the deepening of research and the rapid development of nanotechnology, nanosemiconductors have also made remarkable progress. In recent years, ZnWO4 in metal tungstates has been widely used in many fields, which is mainly due to its high crystal density, short radiation length, excellent optical properties, good radiation damage resistance, and non‐liquefaction. Therefore, herein, the synthesis methods and applications of ZnWO4 semiconductor materials in recent years are reviewed. First, the crystal structure and characteristics of ZnWO4 are described, and then the latest research progress of ZnWO4 semiconductor materials is summarized. The synthesis methods and contributions to photocatalysis, sensors, electronic materials, and luminescent materials are highlighted. The characteristics of ZnWO4 nanoarrays and their applications in supercapacitors are particularly emphasized, which provide a reference for the development of multifunctional nanoarrays. Finally, the challenges and countermeasures of ZnWO4 semiconductor materials are summarized and prospected. In a word, a new idea and strategy to design and assemble new types of ZnWO4 nanomaterials with multiconstructional systems and multifunctional properties for their practical applications is provided.

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Luminescent Tb3+ doped barium tungstate thin films as a potential candidate for photonic applications

Cited by 8 publications

References 57 publications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Neodymium-Doped Novel Barium Tungstate Nanospindles for the Enhanced Oxygen Evolution Reaction

Synthesis Methods and Applications of Semiconductor Material ZnWO₄ with Multifunctions and Multiconstructions

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Luminescent Tb3+ doped barium tungstate thin films as a potential candidate for photonic applications

Cited by 8 publications

References 57 publications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo0.75W0.25O4 single crystal for optical limiting applications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo0.75W0.25O4 single crystal for optical limiting applications

Neodymium-Doped Novel Barium Tungstate Nanospindles for the Enhanced Oxygen Evolution Reaction

Synthesis Methods and Applications of Semiconductor Material ZnWO4 with Multifunctions and Multiconstructions

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Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Revealing photoluminescence and nonlinear optical absorption characteristics of PbMo_0.75W_0.25O₄ single crystal for optical limiting applications

Synthesis Methods and Applications of Semiconductor Material ZnWO₄ with Multifunctions and Multiconstructions