Abstract:The endohedral fullerene Y 3 N@C 80 exhibits luminescence with reasonable quantum yield and extraordinary long lifetime.B yv ariable-temperatures teady-state and timeresolved luminescence spectroscopy, it is demonstrated that above6 0Kthe Y 3 N@C 80 exhibits thermally activated delayed fluorescence with maximum emission at 120 Kand anegligible prompt fluorescence.B elow 60 K, ap hosphorescence with al ifetime of 192 AE 1msi so bserved. Spin distribution and dynamics in the triplet excited state is investigated with X-and W-band EPR and ENDOR spectroscopies and DFT computations.Finally,electroluminescence of the Y 3 N@C 80 /PFO film is demonstrated opening the possibility for red-emitting fullerene-based organic light-emitting diodes (OLEDs).Fullerenes usually exhibit low quantum yields (QY) of fluorescence (in the range of 10 À4 )owing to the slow radiative decay and af ast and efficient inter-system crossing (ISC), leading to an almost quantitative formation of triplet states with slow non-radiative decay.E xohedral chemical derivatization can substantially modify the p-system of fullerenes and produce highly luminescent multi-adducts.[1] Another way to enhance the quantum yield of luminescence of fullerenes is based on the thermal repopulation of the S 1 state,v ia the T 1 state,i ft he S 1 -T 1 gap is sufficiently small. This process is known as thermally activated delayed fluorescence (TADF) and has been found to increase the fluorescence quantum yield of C 70 up to 0.08 at high temperatures.[2] TADF is currently an extensively examined phenomenon in the field of organic light-emitting diodes (OLEDs) as it allows to harvest up to 100 %ofelectrically formed excitons. [3] With the exception of several Er-and Tm-based endohedral metallofullerenes (EMFs), [4] with metal-based emission, EMFs are also non-luminescent.[5] Thei nternal heavy-atom effect leads to even faster ISC in EMFs than in empty fullerenes.T he lifetime of the S 1 state in Sc 3 N@C 80 is only 48 ps.[6] Surprisingly,Y 3 N@C 80 exhibits luminescence with reasonable quantum yield of ca 1% or even 8% in ac ycloadduct, [7] and an unusually long luminescence lifetime of 200-800 ns at room temperature.H erein, we explore the photoemission mechanism of Y 3 N@C 80 with variable-temperature time-resolved luminescence spectroscopy and EPR spectroscopy.The former reveals the evolution of the emission spectra and lifetimes with temperature,w hereas the latter provides information on relaxation dynamics and spin density distribution in the triplet state of Y 3 N@C 80 .W eshow that efficient photoemission of Y 3 N@C 80 is caused by the small S 1 -T 1 gap leading to TADF above 60 K. In ab lend with polyfluorene (PFO), Y 3 N@C 80 exhibits electroluminescence,w hich suggests that after suitable optimization and boost of the QY, Y 3 N@C 80 may be used for red or NIR-emitting OLEDs.In deoxygenated toluene solution, Y 3 N@C 80 exhibits luminescence with aQ Yo f1 .7 %a nd lifetime of 0.95 msa t 296 K. Saturation with air leads to athreefold reduction of...