Macro-loading effects of electron-cyclotron resonance etched II–VI materials

Stoltz, A. J.; Benson, J. D.; Varesi, J. B.; Martinka, M.; Sperry, M. J.; Kaleczyc, A. W.; Almeida, L. A.; Boyd, P. R.; Dinan, J. H.

doi:10.1007/s11664-004-0067-0

Cited by 7 publications

(11 citation statements)

References 10 publications

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“…As discussed in Ref. 15, the II-VI semiconductor area may also cause macroloading changes. The HgCdTe-only sample, shown in Fig.…”

Section: Resultsmentioning

confidence: 95%

“…15, macroloading exists in noble/hydrogen plasma processing of HgCdTe. The macroloading phenomenon (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…From Ref. 15 one of the major factors affecting macroloading in HgCdTe is photoresist area. These new hydrogen results may help explain macroloading issues whereby additional photoresist area slowed HgCdTe, CdTe, and photoresist etch rates.…”

Section: Resultsmentioning

confidence: 99%

“…The plasma etch rate of the epilayer and photoresist mask has been shown to be dependent on wafer area. 15 This effect, known as macroloading, seriously impacts on HgCdTe manufacturing reliability. It will be shown herein that OES aids in understanding the area dependence of photoresist and epilayer etch rates.…”

Section: Introductionmentioning

confidence: 99%

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Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas

Stoltz

Benson

Smith

2010

Journal of Elec Materi

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Inductively coupled plasmas (ICP) are the high-density plasmas of choice for processing HgCdTe and related compounds. Real-time examination of the ICP plasmas used to process HgCdTe would be desirable. In this preliminary study, the feasibility of using optical emission spectroscopy (OES) of ICP plasma used for processing HgCdTe has been examined. We have examined the utility of OES as a real-time diagnostic tool for HgCdTe device fabrication. In this preliminary study it has been found that mercury and cadmium can be detected but are dependent on several factors: sample area, material composition, etch rate, sample temperature, photoresist area, and plasma power. Furthermore, we found strong correlation between the amount of hydrogen detected by OES for samples with photoresist versus samples without photoresist while processing with hydrogen-based plasma. Hydrogen emission intensity decreased dramatically in samples with photoresist, contrary to the theory that photoresist adds hydrogen to the plasma effluent. It appears that hydrogen complexes with photoresist, reducing the global amount of hydrogen during the process. Furthermore, this phenomena may help to explain macroloading issues whereby additional photoresist area slowed HgCdTe, CdTe, and photoresist etch rates.

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“…As discussed in Ref. 15, the II-VI semiconductor area may also cause macroloading changes. The HgCdTe-only sample, shown in Fig.…”

Section: Resultsmentioning

confidence: 95%

“…15, macroloading exists in noble/hydrogen plasma processing of HgCdTe. The macroloading phenomenon (Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas

Stoltz

Benson

Smith

2010

Journal of Elec Materi

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“…More details regarding the ECR etch process to transfer patterns in HgCdTe thin films can be found in the literature. 11 A Bede D1 double crystal x-ray diffractometer (Durham, U.K.) was used to examine bulk microstructural changes in HgCdTe films after deposition and complete etching of a-Si:H resists. Rocking curve full width at half maximum (FWHM) maps were obtained before and after processing.…”

Section: Methodsmentioning

confidence: 99%