Macroscopic theory of pulsed-laser annealing. I. Thermal transport and melting

Wood, R. F.; Giles, G.E.

doi:10.1103/physrevb.23.2923

Cited by 444 publications

(114 citation statements)

References 24 publications

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“…The first one is the crossover between the regime of solute segregation and the regime of solute trapping, which sets in as the pulling velocity, V , is increased. The good quantitative agreement of our estimates for the segregation coefficient, k(V ), with existing theories [11][12][13] confirmed that MD is a valuable simulation tool for DS. The second point is the advection of the liquid phase towards the solidification front.…”

Section: Discussionsupporting

confidence: 83%

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Nonequilibrium molecular dynamics simulation of rapid directional solidification

Celestini

Debierre

2000

Phys. Rev. B

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We present the results of non-equilibrium molecular dynamics simulations for the growth of a solid binary alloy from its liquid phase. The regime of high pulling velocities, V , for which there is a progressive transition from solute segregation to solute trapping, is considered. In the segregation regime, we recover the exponential form of the concentration profile within the liquid phase. Solute trapping is shown to settle in progressively as V is increased and our results are in good agreement with the theoretical predictions of Aziz [J. Appl. Phys. 53, 1158(1981]. In addition, the fluid advection velocity is shown to remain directly proportional to V , even at the highest velocities considered here (V ≃ 10ms −1 ).

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Section: Discussionsupporting

confidence: 83%

“…As a consequence, some solute is trapped in the solid and segregation at the interface is lowered. Several models have been proposed to describe solute-trapping [11][12][13]. The usual qualitative criterion for segregation is to compare two different characteristic times.…”

Section: B Segregation Coefficientmentioning

confidence: 99%

Nonequilibrium molecular dynamics simulation of rapid directional solidification

Celestini

Debierre

2000

Phys. Rev. B

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“…The energy of the excited states is relaxed to lattice vibration states within the time on the order of 10 −12 s [9]. In the case of ns-order pulsed laser irradiation, lattice heat is, therefore, the most important interaction [10]. The heat energy generated at the surface region caused by light absorption diffuses into interior regions of silicon films.…”

Section: Laser-induced Heating Followed By Melting Of Silicon and Germentioning

confidence: 99%

“…The high heat-diffusion coefficient of silicon allows heat diffusion into the underlying substrates. The heating characteristics of silicon films therefore depend on the thermal properties of the substrates [10,11]. In a case of silicon films formed on glass substrates, heating properties of the silicon films such as the threshold energy density for crystallization are therefore governed by the heat diffusivity, the density and the specific heat of the glass substrates.…”

Section: Laser-induced Heating Followed By Melting Of Silicon and Germentioning

confidence: 99%

Laser crystallization for large-area electronics

Sameshima

2009

Appl. Phys. A

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Laser crystallization is reviewed for the purpose of fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs). Laser-induced rapid heating is important for formation of crystalline films with a low thermal budget. Reduction of electrically active defects located at grain boundaries is essential for improving electrical properties of poly-Si films and achieving poly-Si TFTs with high performances. The internal film stress is attractive to increase the carrier mobility. Recent developments in laser crystallization methods with pulsed and continuous-wave lasers are also reviewed. Control of heat flow results in crystalline grain growth in the lateral direction, which is important for fabrication of large crystalline grains. We also report an annealing method using a high-power infrared semiconductor laser. High-power lasers will be attractive for rapid formation of crystalline films over a large area and activation of silicon with impurity atoms.

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“…This energy cascade depends mainly on relaxation times as well as heat capacities of carriers, LO phonons, and acoustic phonons. The physical properties of semiconductors taken from open literatures 1,5,6,9,12,[14][15][16][17][18][19][20][21] are listed in Table 1. The finite difference method with fully implicit scheme is used for discretizing the set of governing equations, and numerical accuracy is the second order for spatial and transient terms.…”

Section: Governing Equations and Computational Detailsmentioning

confidence: 99%

Three Temperature Model for Nonequilibrium Energy Transfer in Semiconductor Films Irradiated with Short Pulse Lasers

et al. 2006

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This article investigates numerically carrier-phonon interaction and nonequilibrium energy transfer in direct and indirect bandgap semiconductors during sub-picosecond pulse laser irradiation and also examines the recombination effects on energy transport from the microscopic viewpoint. In addition, the influence of laser fluence and pulse duration is studied by using the self-consistent three-temperature model, which involves carriers, longitudinal optical phonons, and acoustic phonons. It is found that a substantial non-equilibrium state exists between carriers and phonons during short pulse laser irradiation because of time scale difference between the relaxation time and the pulse duration. It is clear that the two-peak structure in carrier temperature exists and it depends mainly on laser pulses, fluences, and recombination processes. During laser irradiation, in particular, the Auger recombination for Si becomes dominant due to the increase in the carrier number density, whereas for GaAs, the Auger recombination process can be ignored due to an abrupt increase in SRH recombination rates at the initial stages of laser exposure.

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Macroscopic theory of pulsed-laser annealing. I. Thermal transport and melting

Cited by 444 publications

References 24 publications

Nonequilibrium molecular dynamics simulation of rapid directional solidification

Nonequilibrium molecular dynamics simulation of rapid directional solidification

Laser crystallization for large-area electronics

Three Temperature Model for Nonequilibrium Energy Transfer in Semiconductor Films Irradiated with Short Pulse Lasers

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